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Paper Abstract and Keywords
Presentation 2015-04-17 10:50
[Invited Talk] A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method
Takanori Matsuzaki, Tatsuya Onuki, Shuhei Nagatsuka, Hiroki Inoue, Takahiko Ishizu, Yoshinori Ieda, Masayuki Sakakura, Tomoaki Atsumi, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Yoshitaka Yamamoto (SEL), Masahiro Fujita (The Univ. of Tokyo), Jun Koyama, Shunpei Yamazaki (SEL) Link to ES Tech. Rep. Archives: ICD2015-9
Abstract (in Japanese) (See Japanese page) 
(in English) A 128kbit 4bit/cell memory is achieved by a nonvolatile oxide semiconductor RAM test chip with a c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) FET. Data are written by a Vt cancel write method. In a 32768-cell memory, the 3σ distribution width of the read voltage is 47mV, and 16 nonoverlapping distributions are obtained. In a 4bit A/D whose offset-compensating voltage is controlled by a CAAC-IGZO FET, the output phase duration is 10s and the transition point voltage varies by 4mV.
Keyword (in Japanese) (See Japanese page) 
(in English) Crystalline Oxide Semiconductor / CAAC-IGZO / CMOS / 4bit/cell / In-Ga-Zn oxide / nonvolatile / RAM / FET  
Reference Info. IEICE Tech. Rep., vol. 115, no. 6, ICD2015-9, pp. 39-44, April 2015.
Paper # ICD2015-9 
Date of Issue 2015-04-09 (ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Conference Information
Committee ICD  
Conference Date 2015-04-16 - 2015-04-17 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2015-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method 
Sub Title (in English)  
Keyword(1) Crystalline Oxide Semiconductor  
Keyword(2) CAAC-IGZO  
Keyword(3) CMOS  
Keyword(4) 4bit/cell  
Keyword(5) In-Ga-Zn oxide  
Keyword(6) nonvolatile  
Keyword(7) RAM  
Keyword(8) FET  
1st Author's Name Takanori Matsuzaki  
1st Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
2nd Author's Name Tatsuya Onuki  
2nd Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
3rd Author's Name Shuhei Nagatsuka  
3rd Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
4th Author's Name Hiroki Inoue  
4th Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
5th Author's Name Takahiko Ishizu  
5th Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
6th Author's Name Yoshinori Ieda  
6th Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
7th Author's Name Masayuki Sakakura  
7th Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
8th Author's Name Tomoaki Atsumi  
8th Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
9th Author's Name Yutaka Shionoiri  
9th Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
10th Author's Name Kiyoshi Kato  
10th Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
11th Author's Name Takashi Okuda  
11th Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
12th Author's Name Yoshitaka Yamamoto  
12th Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
13th Author's Name Masahiro Fujita  
13th Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
14th Author's Name Jun Koyama  
14th Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
15th Author's Name Shunpei Yamazaki  
15th Author's Affiliation Semiconductor Energy Laboratory CO.,LTD. (SEL)
16th Author's Name  
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17th Author's Affiliation ()
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Speaker
Date Time 2015-04-17 10:50:00 
Presentation Time 50 
Registration for ICD 
Paper # IEICE-ICD2015-9 
Volume (vol) IEICE-115 
Number (no) no.6 
Page pp.39-44 
#Pages IEICE-6 
Date of Issue IEICE-ICD-2015-04-09 


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