Paper Abstract and Keywords |
Presentation |
2015-03-02 13:35
[Invited Talk]
CNT Via Integration with Highly Dense and Selective CNT Growth Atsunobu Isobayashi, Makoto Wada, Ban Ito, Tatsuro Saito, Daisuke Nishide, T. Ishikura, Masayuki Katagiri, Yuichi Yamazaki, Takashi Matsumoto, Masayuki Kitamura, Masahito Watanabe, Naoshi Sakuma, Akihiro Kajita, Tadashi Sakai (LEAP) SDM2014-167 Link to ES Tech. Rep. Archives: SDM2014-167 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this study, a highly selective carbon nanotube (CNT) via process was developed using a sacrificial spin-on carbon (SOC) chemical mechanical polishing (CMP) and a sidewall sealing processes. These processes suppressed CNT growth from the top surface and via sidewalls respectively and, as a result, realized a highly uniform and dense CNT connection between the two wirings. By applying this to a two-level interconnects structure in 300mm wafer, 100% yield was achieved in 20k scale via chain test pattern with the via diameter of 100nm and a tight distribution of via resistance with highly dense CNT connecting the two wirings was obtained. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
CNT / via / selective growth / interconnect / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 469, SDM2014-167, pp. 29-32, March 2015. |
Paper # |
SDM2014-167 |
Date of Issue |
2015-02-23 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2014-167 Link to ES Tech. Rep. Archives: SDM2014-167 |
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