Paper Abstract and Keywords |
Presentation |
2015-02-06 10:15
Current Noise Characteristics in GaAs-based Nanowire FETs and Carbon Nanotube Devices Shinya Inoue, Seiya Kasai (Hokkaido Univ.), Agung Setiadi, Megumi Akai-Kasaya (Osaka Univ.) ED2014-148 SDM2014-157 Link to ES Tech. Rep. Archives: ED2014-148 SDM2014-157 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
For detection of charge dynamics of single molecules, we investigate current noises in GaAs nanowire FET and Carbon nanotube (CNT) network with single molecules dispersed on their surfaces. The Schottky-gate GaAs nanowire FETs with Tetraphenylporphyrin (TPP) under 405-nm light irradiation showed 1/f2 drain current noise having Lorentzian spectrum, whereas the GaAs nanowire FET usually have shown 1/f noise. 1/f2 noise was also observed in a CNT network with Phosphododecamolybdic acid (PMo12) on its surface. Since Lorentzian spectrum arises from a random discrete event, the observed noise suggested the discrete charge state of the single molecules. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaAs nanowire / Carbon nanotube / single molecule / noise / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 442, ED2014-148, pp. 57-61, Feb. 2015. |
Paper # |
ED2014-148 |
Date of Issue |
2015-01-29 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2014-148 SDM2014-157 Link to ES Tech. Rep. Archives: ED2014-148 SDM2014-157 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2015-02-05 - 2015-02-06 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hokkaido Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Functional nanodevices and related technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2015-02-SDM-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Current Noise Characteristics in GaAs-based Nanowire FETs and Carbon Nanotube Devices |
Sub Title (in English) |
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GaAs nanowire |
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Carbon nanotube |
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single molecule |
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noise |
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1st Author's Name |
Shinya Inoue |
1st Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
2nd Author's Name |
Seiya Kasai |
2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
3rd Author's Name |
Agung Setiadi |
3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
4th Author's Name |
Megumi Akai-Kasaya |
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Osaka University (Osaka Univ.) |
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Speaker |
Author-2 |
Date Time |
2015-02-06 10:15:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2014-148, SDM2014-157 |
Volume (vol) |
vol.114 |
Number (no) |
no.442(ED), no.443(SDM) |
Page |
pp.57-61 |
#Pages |
5 |
Date of Issue |
2015-01-29 (ED, SDM) |
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