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Paper Abstract and Keywords
Presentation 2015-02-06 10:15
Current Noise Characteristics in GaAs-based Nanowire FETs and Carbon Nanotube Devices
Shinya Inoue, Seiya Kasai (Hokkaido Univ.), Agung Setiadi, Megumi Akai-Kasaya (Osaka Univ.) ED2014-148 SDM2014-157 Link to ES Tech. Rep. Archives: ED2014-148 SDM2014-157
Abstract (in Japanese) (See Japanese page) 
(in English) For detection of charge dynamics of single molecules, we investigate current noises in GaAs nanowire FET and Carbon nanotube (CNT) network with single molecules dispersed on their surfaces. The Schottky-gate GaAs nanowire FETs with Tetraphenylporphyrin (TPP) under 405-nm light irradiation showed 1/f2 drain current noise having Lorentzian spectrum, whereas the GaAs nanowire FET usually have shown 1/f noise. 1/f2 noise was also observed in a CNT network with Phosphododecamolybdic acid (PMo12) on its surface. Since Lorentzian spectrum arises from a random discrete event, the observed noise suggested the discrete charge state of the single molecules.
Keyword (in Japanese) (See Japanese page) 
(in English) GaAs nanowire / Carbon nanotube / single molecule / noise / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 442, ED2014-148, pp. 57-61, Feb. 2015.
Paper # ED2014-148 
Date of Issue 2015-01-29 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-148 SDM2014-157 Link to ES Tech. Rep. Archives: ED2014-148 SDM2014-157

Conference Information
Committee SDM ED  
Conference Date 2015-02-05 - 2015-02-06 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To ED 
Conference Code 2015-02-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Current Noise Characteristics in GaAs-based Nanowire FETs and Carbon Nanotube Devices 
Sub Title (in English)  
Keyword(1) GaAs nanowire  
Keyword(2) Carbon nanotube  
Keyword(3) single molecule  
Keyword(4) noise  
1st Author's Name Shinya Inoue  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Seiya Kasai  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Agung Setiadi  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Megumi Akai-Kasaya  
4th Author's Affiliation Osaka University (Osaka Univ.)
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Date Time 2015-02-06 10:15:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2014-148,IEICE-SDM2014-157 
Volume (vol) IEICE-114 
Number (no) no.442(ED), no.443(SDM) 
Page pp.57-61 
#Pages IEICE-5 
Date of Issue IEICE-ED-2015-01-29,IEICE-SDM-2015-01-29 

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