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Paper Abstract and Keywords
Presentation 2015-02-05 15:05
Highly functionality of three-terminal nanodot array for multi-input and multi-output devices
Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150 Link to ES Tech. Rep. Archives: ED2014-141 SDM2014-150
Abstract (in Japanese) (See Japanese page) 
(in English) Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional CMOS devices do not have. This functionality is provided by special feature in which many input gates couple capacitively with many nanodots. When the number of gates increases, shield effect by the other gates disturb the coupling many nanodots. Here, we investigate the functionality of devices with different gate arrangement and achieved complicated logic functions such as XOR even by the use of a nanodot array device with almost independent input gates.
Keyword (in Japanese) (See Japanese page) 
(in English) single-electron device / multi-input and multi-output device / logic function / / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 442, ED2014-141, pp. 17-22, Feb. 2015.
Paper # ED2014-141 
Date of Issue 2015-01-29 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-141 SDM2014-150 Link to ES Tech. Rep. Archives: ED2014-141 SDM2014-150

Conference Information
Committee SDM ED  
Conference Date 2015-02-05 - 2015-02-06 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To ED 
Conference Code 2015-02-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Highly functionality of three-terminal nanodot array for multi-input and multi-output devices 
Sub Title (in English)  
Keyword(1) single-electron device  
Keyword(2) multi-input and multi-output device  
Keyword(3) logic function  
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1st Author's Name Isamu Yoshioka  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Hikaru Satoh  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Takafumi Uchida  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Atsushi Tsurumaki-Fukuchi  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
5th Author's Name Masashi Arita  
5th Author's Affiliation Hokkaido University (Hokkaido Univ.)
6th Author's Name Akira Fujiwara  
6th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
7th Author's Name Yasuo Takahashi  
7th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2015-02-05 15:05:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2014-141, SDM2014-150 
Volume (vol) vol.114 
Number (no) no.442(ED), no.443(SDM) 
Page pp.17-22 
#Pages
Date of Issue 2015-01-29 (ED, SDM) 


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