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| Presentation | 2015-01-30 10:00 Feasibility study of high-frequency power converter using SiC power device Shinji Sato, Hidekazu Tanisawa, Hiroki Takahashi, Takeshi Anzai, Kohei Hiyama, Yoshinori Murakami, Hiroshi Sato (FUPET)  EE2014-34 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | SiC power devices can be operated in the higher temperature than Si power devices. And also, it can achieve the high-speed switching operation with lower switching losses, so that the high frequency switching can be realized. Thus, there is a possibility that a cooling system and electrical filter can be smaller. It can leads the whole converter system smaller. In this paper, we discuss the design of high frequency power converter using SiC power devices. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiC power device / JFET / Strain capacitor / wide-gap semiconductor / DC-DC converter / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 429, EE2014-34, pp. 31-35, Jan. 2015. | |
| Paper # | EE2014-34 | |
| Date of Issue | 2015-01-22 (EE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EE2014-34 |
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| Conference Information | |
| Committee | EE |
| Conference Date | 2015-01-29 - 2015-01-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Sakura-No-Baba JOSAIEN |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | EE |
| Conference Code | 2015-01-EE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Feasibility study of high-frequency power converter using SiC power device |
| Sub Title (in English) | |
| Keyword(1) | SiC power device |
| Keyword(2) | JFET |
| Keyword(3) | Strain capacitor |
| Keyword(4) | wide-gap semiconductor |
| Keyword(5) | DC-DC converter |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shinji Sato |
| 1st Author's Affiliation | R&D Partnership for Future Power Electronics Technology (FUPET) |
| 2nd Author's Name | Hidekazu Tanisawa |
| 2nd Author's Affiliation | R&D Partnership for Future Power Electronics Technology (FUPET) |
| 3rd Author's Name | Hiroki Takahashi |
| 3rd Author's Affiliation | R&D Partnership for Future Power Electronics Technology (FUPET) |
| 4th Author's Name | Takeshi Anzai |
| 4th Author's Affiliation | R&D Partnership for Future Power Electronics Technology (FUPET) |
| 5th Author's Name | Kohei Hiyama |
| 5th Author's Affiliation | R&D Partnership for Future Power Electronics Technology (FUPET) |
| 6th Author's Name | Yoshinori Murakami |
| 6th Author's Affiliation | R&D Partnership for Future Power Electronics Technology (FUPET) |
| 7th Author's Name | Hiroshi Sato |
| 7th Author's Affiliation | R&D Partnership for Future Power Electronics Technology (FUPET) |
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| Speaker | Author-1 |
| Date Time | 2015-01-30 10:00:00 |
| Presentation Time | 30 minutes |
| Registration for | EE |
| Paper # | EE2014-34 |
| Volume (vol) | vol.114 |
| Number (no) | no.429 |
| Page | pp.31-35 |
| #Pages | 5 |
| Date of Issue | 2015-01-22 (EE) |
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