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Paper Abstract and Keywords
Presentation 2015-01-29 17:00
Temperature sensor applying Body Bias in Silicon-on-Thin-BOX
Tsubasa Kosaka, Shohei Nakamura, Kimiyoshi Usami (S.I.T.) VLD2014-127 CPSY2014-136 RECONF2014-60
Abstract (in Japanese) (See Japanese page) 
(in English) The performance advancement by the transistor scaling is blocked by increase of power consumption and process variation. Silicon on Thin BOX(SOTB) solve these problems. In addition, there is a problem that the temperature changes in a transistor. The temperature change causes deterioration and the trouble of the transistor and causes malfunction of the chip. The temperature sensor which measures the temperature in the chip is necessary. In this paper, a temperature sensor for SOTB is proposed. We demonstrate that the temperature sensor for SOTB enables us to achieve high precision of the thermometry and mitigate the process variation at every chip by Body Bias than a conventional bulk transistor.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon-on -Thin-BOX MOSFET / Body Biasv / Temperature sensor / Leakage monitor / Process variation / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 426, VLD2014-127, pp. 99-104, Jan. 2015.
Paper # VLD2014-127 
Date of Issue 2015-01-22 (VLD, CPSY, RECONF) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
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Download PDF VLD2014-127 CPSY2014-136 RECONF2014-60

Conference Information
Committee RECONF CPSY VLD IPSJ-SLDM  
Conference Date 2015-01-29 - 2015-01-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Hiyoshi Campus, Keio University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) FPGA Applications, etc 
Paper Information
Registration To VLD 
Conference Code 2015-01-RECONF-CPSY-VLD-SLDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Temperature sensor applying Body Bias in Silicon-on-Thin-BOX 
Sub Title (in English)  
Keyword(1) Silicon-on -Thin-BOX MOSFET  
Keyword(2) Body Biasv  
Keyword(3) Temperature sensor  
Keyword(4) Leakage monitor  
Keyword(5) Process variation  
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1st Author's Name Tsubasa Kosaka  
1st Author's Affiliation Shibaura Institute of Technology (S.I.T.)
2nd Author's Name Shohei Nakamura  
2nd Author's Affiliation Shibaura Institute of Technology (S.I.T.)
3rd Author's Name Kimiyoshi Usami  
3rd Author's Affiliation Shibaura Institute (S.I.T.)
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Speaker
Date Time 2015-01-29 17:00:00 
Presentation Time 20 
Registration for VLD 
Paper # IEICE-VLD2014-127,IEICE-CPSY2014-136,IEICE-RECONF2014-60 
Volume (vol) IEICE-114 
Number (no) no.426(VLD), no.427(CPSY), no.428(RECONF) 
Page pp.99-104 
#Pages IEICE-6 
Date of Issue IEICE-VLD-2015-01-22,IEICE-CPSY-2015-01-22,IEICE-RECONF-2015-01-22 


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