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| Presentation | 2015-01-27 15:55 [Invited Talk] 16 nm FinFET High-k/Metal-gate 256-kbit 6T SRAM Macros with Wordline Overdriven Assist Makoto Yabuuchi, Masao Morimoto, Yasumasa Tsukamoto, Shinji Tanaka, Koji Tanaka, Miki Tanaka, Koji Nii (Renesas)  SDM2014-144 Link to ES Tech. Rep. Archives: SDM2014-144 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We demonstrate 16 nm FinFET High-k/Metal-gate SRAM macros with a wordline (WL) overdriven read/write-assist circuit. Test-chip measurements confirm improved minimum operating voltage (Vmin), standby leakage current, and access time compared to planar bulk CMOS. The proposed assist circuit improves Vmin by 50 mV and improves read-access-time by more than 1.5 times in 256-kbit SRAM macros. Read current (Iread) dependence against the fin diffusion length was observed. An extra design guard-band is needed to provide a reliable operation margin. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SRAM / 16nm / FinFET / assist circuit / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 421, SDM2014-144, pp. 37-40, Jan. 2015. | |
| Paper # | SDM2014-144 | |
| Date of Issue | 2015-01-20 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2014-144 Link to ES Tech. Rep. Archives: SDM2014-144 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2015-01-27 - 2015-01-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2015-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 16 nm FinFET High-k/Metal-gate 256-kbit 6T SRAM Macros with Wordline Overdriven Assist |
| Sub Title (in English) | |
| Keyword(1) | SRAM |
| Keyword(2) | 16nm |
| Keyword(3) | FinFET |
| Keyword(4) | assist circuit |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Makoto Yabuuchi |
| 1st Author's Affiliation | Renesas Electronics Corporation (Renesas) |
| 2nd Author's Name | Masao Morimoto |
| 2nd Author's Affiliation | Renesas Electronics Corporation (Renesas) |
| 3rd Author's Name | Yasumasa Tsukamoto |
| 3rd Author's Affiliation | Renesas Electronics Corporation (Renesas) |
| 4th Author's Name | Shinji Tanaka |
| 4th Author's Affiliation | Renesas Electronics Corporation (Renesas) |
| 5th Author's Name | Koji Tanaka |
| 5th Author's Affiliation | Renesas Electronics Corporation (Renesas) |
| 6th Author's Name | Miki Tanaka |
| 6th Author's Affiliation | Renesas Electronics Corporation (Renesas) |
| 7th Author's Name | Koji Nii |
| 7th Author's Affiliation | Renesas Electronics Corporation (Renesas) |
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| Speaker | Author-1 |
| Date Time | 2015-01-27 15:55:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2014-144 |
| Volume (vol) | vol.114 |
| Number (no) | no.421 |
| Page | pp.37-40 |
| #Pages | 4 |
| Date of Issue | 2015-01-20 (SDM) |
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