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Paper Abstract and Keywords
Presentation 2015-01-23 15:45
Room Temperature Operation of Silicon Spin-MOSFET
Takayuki Tahara (Kyoto Univ.), Tomoyuki Sasaki (TDK), Yuichiro Ando (Kyoto Univ.), Makoto Kameno (Osaka Univ.), Hayato Koike, Ryo Oikawa (TDK), Toshio Suzuki (AIT), Masashi Shiraishi (Kyoto Univ.) MR2014-43 Link to ES Tech. Rep. Archives: MR2014-43
Abstract (in Japanese) (See Japanese page) 
(in English) A technology for CMOS transistors has been developing for many years by establishing nano-lithography and high density integration techniques. However, the nano-lothography technique is facing with physical limits and a problem on huge energy consumption of the transistors becomes more serious. We have been studying semiconductor spitronics in order to solve the above mentioned problems. In a field of spintronics, spin metal-oxide-semiconductor field-effect transistor (MOSFET), which is a spin version of a conventional MOSFET, was proposed, but conventional studies were limitted in spin transport in a degenerate Si channel. In this paper, we report on the first experimental demonstration of Si-based spin MOSFET using non-degenerate Si, which is based on background physics of spin transportphysics in degenerate Si.
Keyword (in Japanese) (See Japanese page) 
(in English) Beyond-CMOS / Spintronics / Spin-MOSFET / Silicon / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, Jan. 2015.
Paper #  
Date of Issue 2015-01-16 (MR) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MR2014-43 Link to ES Tech. Rep. Archives: MR2014-43

Conference Information
Committee MRIS ITE-MMS ITE-CE  
Conference Date 2015-01-23 - 2015-01-23 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To MRIS 
Conference Code 2015-01-MR-MMS-CE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Room Temperature Operation of Silicon Spin-MOSFET 
Sub Title (in English)  
Keyword(1) Beyond-CMOS  
Keyword(2) Spintronics  
Keyword(3) Spin-MOSFET  
Keyword(4) Silicon  
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1st Author's Name Takayuki Tahara  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Tomoyuki Sasaki  
2nd Author's Affiliation TDK Corporation (TDK)
3rd Author's Name Yuichiro Ando  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Makoto Kameno  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name Hayato Koike  
5th Author's Affiliation TDK Corporation (TDK)
6th Author's Name Ryo Oikawa  
6th Author's Affiliation TDK Corporation (TDK)
7th Author's Name Toshio Suzuki  
7th Author's Affiliation Akita Prefectural Industrial Center (AIT)
8th Author's Name Masashi Shiraishi  
8th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker
Date Time 2015-01-23 15:45:00 
Presentation Time 25 
Registration for MRIS 
Paper # IEICE-MR2014-43 
Volume (vol) IEICE-114 
Number (no) no.413 
Page pp.19-24 
#Pages IEICE-6 
Date of Issue IEICE-MR-2015-01-16 


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