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| Presentation | 2015-01-23 15:45 Room Temperature Operation of Silicon Spin-MOSFET Takayuki Tahara (Kyoto Univ.), Tomoyuki Sasaki (TDK), Yuichiro Ando (Kyoto Univ.), Makoto Kameno (Osaka Univ.), Hayato Koike, Ryo Oikawa (TDK), Toshio Suzuki (AIT), Masashi Shiraishi (Kyoto Univ.)  MR2014-43 Link to ES Tech. Rep. Archives: MR2014-43 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A technology for CMOS transistors has been developing for many years by establishing nano-lithography and high density integration techniques. However, the nano-lothography technique is facing with physical limits and a problem on huge energy consumption of the transistors becomes more serious. We have been studying semiconductor spitronics in order to solve the above mentioned problems. In a field of spintronics, spin metal-oxide-semiconductor field-effect transistor (MOSFET), which is a spin version of a conventional MOSFET, was proposed, but conventional studies were limitted in spin transport in a degenerate Si channel. In this paper, we report on the first experimental demonstration of Si-based spin MOSFET using non-degenerate Si, which is based on background physics of spin transportphysics in degenerate Si. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Beyond-CMOS / Spintronics / Spin-MOSFET / Silicon / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, Jan. 2015. | |
| Paper # | ||
| Date of Issue | 2015-01-16 (MR) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MR2014-43 Link to ES Tech. Rep. Archives: MR2014-43 |
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| Conference Information | |
| Committee | MRIS ITE-MMS ITE-CE |
| Conference Date | 2015-01-23 - 2015-01-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | MRIS |
| Conference Code | 2015-01-MR-MMS-CE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Room Temperature Operation of Silicon Spin-MOSFET |
| Sub Title (in English) | |
| Keyword(1) | Beyond-CMOS |
| Keyword(2) | Spintronics |
| Keyword(3) | Spin-MOSFET |
| Keyword(4) | Silicon |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takayuki Tahara |
| 1st Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 2nd Author's Name | Tomoyuki Sasaki |
| 2nd Author's Affiliation | TDK Corporation (TDK) |
| 3rd Author's Name | Yuichiro Ando |
| 3rd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 4th Author's Name | Makoto Kameno |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
| 5th Author's Name | Hayato Koike |
| 5th Author's Affiliation | TDK Corporation (TDK) |
| 6th Author's Name | Ryo Oikawa |
| 6th Author's Affiliation | TDK Corporation (TDK) |
| 7th Author's Name | Toshio Suzuki |
| 7th Author's Affiliation | Akita Prefectural Industrial Center (AIT) |
| 8th Author's Name | Masashi Shiraishi |
| 8th Author's Affiliation | Kyoto University (Kyoto Univ.) |
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| Speaker | Author-1 |
| Date Time | 2015-01-23 15:45:00 |
| Presentation Time | 25 minutes |
| Registration for | MRIS |
| Paper # | MR2014-43 |
| Volume (vol) | vol.114 |
| Number (no) | no.413 |
| Page | pp.19-24 |
| #Pages | 6 |
| Date of Issue | 2015-01-16 (MR) |
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