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| Presentation | 2015-01-16 11:30 Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.)  ED2014-129 MW2014-193 Link to ES Tech. Rep. Archives: ED2014-129 MW2014-193 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurement and TCAD simulation. The two type devices which differ only in the concentration of Fe at GaN buffer layer was prepared, and the transient response from OFF state to ON state was measured at various temperature. Trap energy and capture cross-section at GaN buffer layer were extracted by analysis of time constant of traps. And, by using TCAD simulation and these trap parameters, the relationship with traps at GaN buffer layer and transient response was analyzed. In the result, it was found that transient current was increased because electrons which were captured in traps at GaN buffer at OFF state were emitted at ON state, and transient drain current was increased. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / HEMT / trap / transient response / TCAD / Fe / buffer / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 391, ED2014-129, pp. 71-76, Jan. 2015. | |
| Paper # | ED2014-129 | |
| Date of Issue | 2015-01-08 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2014-129 MW2014-193 Link to ES Tech. Rep. Archives: ED2014-129 MW2014-193 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2015-01-15 - 2015-01-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2015-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HEMT |
| Keyword(3) | trap |
| Keyword(4) | transient response |
| Keyword(5) | TCAD |
| Keyword(6) | Fe |
| Keyword(7) | buffer |
| Keyword(8) | |
| 1st Author's Name | Yutaro Yamaguchi |
| 1st Author's Affiliation | Mitsubishi Electric corporation (Mitsubishi Electric corp.) |
| 2nd Author's Name | Takuma Nanjo |
| 2nd Author's Affiliation | Mitsubishi Electric corporation (Mitsubishi Electric corp.) |
| 3rd Author's Name | Hidetoshi Koyama |
| 3rd Author's Affiliation | Mitsubishi Electric corporation (Mitsubishi Electric corp.) |
| 4th Author's Name | Yoshitaka Kamo |
| 4th Author's Affiliation | Mitsubishi Electric corporation (Mitsubishi Electric corp.) |
| 5th Author's Name | Koji Yamanaka |
| 5th Author's Affiliation | Mitsubishi Electric corporation (Mitsubishi Electric corp.) |
| 6th Author's Name | Toshiyuki Oishi |
| 6th Author's Affiliation | Saga University (Saga Univ.) |
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| Speaker | Author-1 |
| Date Time | 2015-01-16 11:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2014-129, MW2014-193 |
| Volume (vol) | vol.114 |
| Number (no) | no.391(ED), no.392(MW) |
| Page | pp.71-76 |
| #Pages | 6 |
| Date of Issue | 2015-01-08 (ED, MW) |
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