講演抄録/キーワード |
講演名 |
2015-01-08 09:40
0.5W S-BAND POWER AMPLIFIER: DESIGN AND IMPLEMENTATION ○Doan Truong Van・Dong-Anh Doan・Linh Mai・Van-Su Tran・Binh-Duong Nguyen・Long-Binh Mai Quang・Liem Kieu Trung(HCMIU) |
抄録 |
(和) |
Design and implementation of the class-A Power Amplifier (PA) circuit board using GaAs transistor MGF430A and working at high frequency presented in this paper. The PA used Advanced Design System (ADS) software to simulate to achieve a high gain, output power, linearity and layout which used FR4 of substrate with height of 1.6 mm and dielectric constants of 4.6. The PA performs a gain of 7.4 dB and 1 dB compression of 21 dBm to obtain the output power from 27 dBm - 28 dBm by 5.6-V supply through, the bandwidth of 2.7 GHz - 3.1 GHz, respectively. Measurement results show that which the gain is 7.3 dB and output power is 27 dBm. Furthermore, this circuit used to concert a low power radio frequency signals into a high power for Radar application. |
(英) |
Design and implementation of the class-A Power Amplifier (PA) circuit board using GaAs transistor MGF430A and working at high frequency presented in this paper. The PA used Advanced Design System (ADS) software to simulate to achieve a high gain, output power, linearity and layout which used FR4 of substrate with height of 1.6 mm and dielectric constants of 4.6. The PA performs a gain of 7.4 dB and 1 dB compression of 21 dBm to obtain the output power from 27 dBm - 28 dBm by 5.6-V supply through, the bandwidth of 2.7 GHz - 3.1 GHz, respectively. Measurement results show that which the gain is 7.3 dB and output power is 27 dBm. Furthermore, this circuit used to concert a low power radio frequency signals into a high power for Radar application. |
キーワード |
(和) |
class A / Power amplifier / ADS / high frequency / 2.9 GHz / MGF2430A / / |
(英) |
class A / Power amplifier / ADS / high frequency / 2.9 GHz / MGF2430A / / |
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