Paper Abstract and Keywords |
Presentation |
2014-12-22 14:10
Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2014-100 Link to ES Tech. Rep. Archives: ED2014-100 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We experimentally investigated the photomixing function in the millimeter wave range by using InGaAs channel high electron mobility transistors (HEMTs) and graphene channel field effect transistors (FETs) which we fabricated. The dual comb IR laser beam having differential frequency 12.5, 25 or 37.5 GHz was introduced to the channel area from the backside of the device and we measured the photoresponse spectrum of the downconverted output. The maximam photoresponse of the InGaAs channel HEMT was obtained at the threshold voltage. We also obtained the photoresponse of the graphene channel FET in spite of its poor current-gain cutoff frequency of 2GHz. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaAs channle HEMT / Graphene channel FET / Photomixing / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 387, ED2014-100, pp. 9-13, Dec. 2014. |
Paper # |
ED2014-100 |
Date of Issue |
2014-12-15 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2014-100 Link to ES Tech. Rep. Archives: ED2014-100 |
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