Paper Abstract and Keywords |
Presentation |
2014-12-12 16:45
Temperature Dependence of Current Gain in 4H-SiC BJTs Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2014-35 SDM2014-130 Link to ES Tech. Rep. Archives: EID2014-35 SDM2014-130 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Temperature dependence of current gain from 140 to 460 K in a 4H-SiC bipolar junction transistor (SiC BJT) was investigated. The current gain increased with reducing the temperature from 460 to 200 K and exhibited the maximum value of 1200 at 200 K. The higher current gain at the low temperature can be ascribed to an enhanced incomplete ionization of aluminum acceptors in the base layer, resulting in an increase of injection efficiency. However, the current gain decreased from 1200 at temperatures below 200 K. This is caused by high injection condition owing to low hole density in the base layer. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
4H-SiC BJT / Current gain / High injection / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 360, SDM2014-130, pp. 115-118, Dec. 2014. |
Paper # |
SDM2014-130 |
Date of Issue |
2014-12-05 (EID, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
EID2014-35 SDM2014-130 Link to ES Tech. Rep. Archives: EID2014-35 SDM2014-130 |
Conference Information |
Committee |
SDM EID |
Conference Date |
2014-12-12 - 2014-12-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Si and Si-related Materials and Devices, Display Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2014-12-SDM-EID |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Temperature Dependence of Current Gain in 4H-SiC BJTs |
Sub Title (in English) |
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Keyword(1) |
4H-SiC BJT |
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Current gain |
Keyword(3) |
High injection |
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1st Author's Name |
Satoshi Asada |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Takafumi Okuda |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Tsunenobu Kimoto |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
4th Author's Name |
Jun Suda |
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Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-12-12 16:45:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
EID2014-35, SDM2014-130 |
Volume (vol) |
vol.114 |
Number (no) |
no.359(EID), no.360(SDM) |
Page |
pp.115-118 |
#Pages |
4 |
Date of Issue |
2014-12-05 (EID, SDM) |
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