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Paper Abstract and Keywords
Presentation 2014-12-12 16:45
Temperature Dependence of Current Gain in 4H-SiC BJTs
Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2014-35 SDM2014-130 Link to ES Tech. Rep. Archives: EID2014-35 SDM2014-130
Abstract (in Japanese) (See Japanese page) 
(in English) Temperature dependence of current gain from 140 to 460 K in a 4H-SiC bipolar junction transistor (SiC BJT) was investigated. The current gain increased with reducing the temperature from 460 to 200 K and exhibited the maximum value of 1200 at 200 K. The higher current gain at the low temperature can be ascribed to an enhanced incomplete ionization of aluminum acceptors in the base layer, resulting in an increase of injection efficiency. However, the current gain decreased from 1200 at temperatures below 200 K. This is caused by high injection condition owing to low hole density in the base layer.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC BJT / Current gain / High injection / / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 360, SDM2014-130, pp. 115-118, Dec. 2014.
Paper # SDM2014-130 
Date of Issue 2014-12-05 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2014-35 SDM2014-130 Link to ES Tech. Rep. Archives: EID2014-35 SDM2014-130

Conference Information
Committee SDM EID  
Conference Date 2014-12-12 - 2014-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, Display Technology 
Paper Information
Registration To SDM 
Conference Code 2014-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Temperature Dependence of Current Gain in 4H-SiC BJTs 
Sub Title (in English)  
Keyword(1) 4H-SiC BJT  
Keyword(2) Current gain  
Keyword(3) High injection  
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1st Author's Name Satoshi Asada  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Takafumi Okuda  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Tsunenobu Kimoto  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Jun Suda  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker
Date Time 2014-12-12 16:45:00 
Presentation Time 15 
Registration for SDM 
Paper # IEICE-EID2014-35,IEICE-SDM2014-130 
Volume (vol) IEICE-114 
Number (no) no.359(EID), no.360(SDM) 
Page pp.115-118 
#Pages IEICE-4 
Date of Issue IEICE-EID-2014-12-05,IEICE-SDM-2014-12-05 


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