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| Presentation | 2014-12-12 11:00 Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment)  EID2014-17 SDM2014-112 Link to ES Tech. Rep. Archives: EID2014-17 SDM2014-112 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Irradiation damage on Si(100) substrates which were irradiated with C$_{n}$H$_{n}^{+}$($n$=3, 7, 14) and C$_{n}$H$_{2n+1}^{+}$($n$=3,6,12) under conditions of 0.4 -- 3.0 keV/carbon and 1$times$10$^{14}$ carbons/cm$^{2}$ were evaluated by using Rutherford back scattering with channeling (RBS/C) and spectroscopic ellipsometry (SE). Number of displaced atoms on Si lattice of C$_{n}$H$_{2n+1}^{+}$ estimated by the RBS/C was 40% greater than that of C$_{n}$H$_{n}^{+}$ at similar energy, which agreed with the SE's data. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | hydrocarbon / ion implantation / annealing / Rutherford backscattering / spectro ellipsometry / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 360, SDM2014-112, pp. 21-24, Dec. 2014. | |
| Paper # | SDM2014-112 | |
| Date of Issue | 2014-12-05 (EID, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EID2014-17 SDM2014-112 Link to ES Tech. Rep. Archives: EID2014-17 SDM2014-112 |
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| Conference Information | |
| Committee | SDM EID |
| Conference Date | 2014-12-12 - 2014-12-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si and Si-related Materials and Devices, Display Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-12-SDM-EID |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate |
| Sub Title (in English) | |
| Keyword(1) | hydrocarbon |
| Keyword(2) | ion implantation |
| Keyword(3) | annealing |
| Keyword(4) | Rutherford backscattering |
| Keyword(5) | spectro ellipsometry |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Mitsuaki Takeuchi |
| 1st Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 2nd Author's Name | Kyohei Hayashi |
| 2nd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 3rd Author's Name | Hiromichi Ryuto |
| 3rd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 4th Author's Name | Gikan H. Takaoka |
| 4th Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 5th Author's Name | Tsutomu Nagayama |
| 5th Author's Affiliation | Nissin Ion Equipment Co., Ltd. (Nissin Ion Equipment) |
| 6th Author's Name | Koji Matsuda |
| 6th Author's Affiliation | Nissin Ion Equipment Co., Ltd. (Nissin Ion Equipment) |
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| Speaker | Author-1 |
| Date Time | 2014-12-12 11:00:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | EID2014-17, SDM2014-112 |
| Volume (vol) | vol.114 |
| Number (no) | no.359(EID), no.360(SDM) |
| Page | pp.21-24 |
| #Pages | 4 |
| Date of Issue | 2014-12-05 (EID, SDM) |
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