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Paper Abstract and Keywords
Presentation 2014-12-12 14:00
Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs
Yosuke Nagase (Ryukoku Univ.), Tokiyoshi Matsuda, Mutsumi Kimura (Osaka Univ.), Taketoshi Matsumoto, Hikaru Kobayashi (Ryukoku Univ.) EID2014-25 SDM2014-120 Link to ES Tech. Rep. Archives: EID2014-25 SDM2014-120
Abstract (in Japanese) (See Japanese page) 
(in English) We have evaluated multiple-input NAND circuits using polycrystalline silicon thin-film transistors and found that the output pulse became degraded for the 3-input NAND circuit. Moreover, we have fabricated the flip-flop circuits, synchronous and asynchronous circuits using the 2-input NAND circuits, and confirmed that the toggle flip-flop circuit and synchronous and asynchronous circuits operated correctly. It is found that the asynchronous circuit can operates faster.
Keyword (in Japanese) (See Japanese page) 
(in English) multiple-input / NAND / polycrystalline silicon (poly-Si) / thin-film transistor (TFT) / toggle flip-flop / synchronous circuit / asynchronous circuit /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 359, EID2014-25, pp. 61-65, Dec. 2014.
Paper # EID2014-25 
Date of Issue 2014-12-05 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2014-25 SDM2014-120 Link to ES Tech. Rep. Archives: EID2014-25 SDM2014-120

Conference Information
Committee SDM EID  
Conference Date 2014-12-12 - 2014-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, Display Technology 
Paper Information
Registration To EID 
Conference Code 2014-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs 
Sub Title (in English)  
Keyword(1) multiple-input  
Keyword(2) NAND  
Keyword(3) polycrystalline silicon (poly-Si)  
Keyword(4) thin-film transistor (TFT)  
Keyword(5) toggle flip-flop  
Keyword(6) synchronous circuit  
Keyword(7) asynchronous circuit  
Keyword(8)  
1st Author's Name Yosuke Nagase  
1st Author's Affiliation Ryukoku University (Ryukoku Univ.)
2nd Author's Name Tokiyoshi Matsuda  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Mutsumi Kimura  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Taketoshi Matsumoto  
4th Author's Affiliation Ryukoku University (Ryukoku Univ.)
5th Author's Name Hikaru Kobayashi  
5th Author's Affiliation Ryukoku University (Ryukoku Univ.)
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Speaker Author-1 
Date Time 2014-12-12 14:00:00 
Presentation Time 15 minutes 
Registration for EID 
Paper # EID2014-25, SDM2014-120 
Volume (vol) vol.114 
Number (no) no.359(EID), no.360(SDM) 
Page pp.61-65 
#Pages
Date of Issue 2014-12-05 (EID, SDM) 


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