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Paper Abstract and Keywords
Presentation 2014-12-02 14:50
Measurements and Evaluations of Aging Degradation Caused by Plasma Induced Damage in 65 nm Process
Ryo Kishida, Azusa Oshima, Kazutoshi Kobayashi (Kyoto Inst. Tech.) ICD2014-106 CPSY2014-118 Link to ES Tech. Rep. Archives: ICD2014-106
Abstract (in Japanese) (See Japanese page) 
(in English) Degradations of reliability caused by plasma induced damage (PID) have become a significant concern with miniaturizing a device size. In this paper, we evaluate BTI (Bias Temperature Instability) which is a main factor of aging degradation caused by PID. We fabricated ring oscillators with an antenna structure on a single stage in 65 nm process. NBTI (Negative BTI) is almost equivalent in small PID structures which are less than AR (Antenna Ratio) of 5k. NBTI increases in large PID structures which is AR of 50k. PBTI (Positive BTI) does not occur even in AR of 50k. PBTI does not appear in poly silicon gate. SOTB (Silicon On Thin BOX) can relieve PID because BTI degradation is equivalent between bulk and SOTB. Connecting an antenna to a drain is good approach to relieve PID.
Keyword (in Japanese) (See Japanese page) 
(in English) PID (Plasma Induced Damage) / BTI (Bias Temperature Instability) / SOTB (Silicon On Thin BOX) / ring oscillator / frequency / reliability / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 345, ICD2014-106, pp. 123-128, Dec. 2014.
Paper # ICD2014-106 
Date of Issue 2014-11-24 (ICD, CPSY) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Conference Information
Committee ICD CPSY  
Conference Date 2014-12-01 - 2014-12-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2014-12-ICD-CPSY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Measurements and Evaluations of Aging Degradation Caused by Plasma Induced Damage in 65 nm Process 
Sub Title (in English)  
Keyword(1) PID (Plasma Induced Damage)  
Keyword(2) BTI (Bias Temperature Instability)  
Keyword(3) SOTB (Silicon On Thin BOX)  
Keyword(4) ring oscillator  
Keyword(5) frequency  
Keyword(6) reliability  
Keyword(7)  
Keyword(8)  
1st Author's Name Ryo Kishida  
1st Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
2nd Author's Name Azusa Oshima  
2nd Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
3rd Author's Name Kazutoshi Kobayashi  
3rd Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
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Speaker
Date Time 2014-12-02 14:50:00 
Presentation Time 25 
Registration for ICD 
Paper # IEICE-ICD2014-106,IEICE-CPSY2014-118 
Volume (vol) IEICE-114 
Number (no) no.345(ICD), no.346(CPSY) 
Page pp.123-128 
#Pages IEICE-6 
Date of Issue IEICE-ICD-2014-11-24,IEICE-CPSY-2014-11-24 


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