Paper Abstract and Keywords |
Presentation |
2014-11-28 14:30
MOCVD Gorwoth and characterization of nearly lattice-matched InAlN/AlGaN 2DEG heterostructures Shu Fujita, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.) ED2014-93 CPM2014-150 LQE2014-121 Link to ES Tech. Rep. Archives: ED2014-93 CPM2014-150 LQE2014-121 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
InAlN/AlGaN two-dimensional-electron gas (2DEG) heterostructures are expected to be able to show extremely high breakdown voltages as well as high 2DEG densities. In this study, we attempted to grow lattice-matched InAlN/AlGaN heterostructures by metalorganic chemical deposition (MOCVD) and to characterize them. Samples with the channel layers of Al0.1Ga0.9N of Al0.2Ga0.8N were successfully grown with nearly-lattice-matched structures. Their 2DEG densities were measured to be as high as 3×10^13/cm2. It was confirmed that such high 2DEG densities are explained as a result of their high spontaneous polarization in InAlN barrier layers. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InAlN/AlGaN heterostructures / MOCVD / two-dimensional-electron gas / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 336, ED2014-93, pp. 97-102, Nov. 2014. |
Paper # |
ED2014-93 |
Date of Issue |
2014-11-20 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2014-93 CPM2014-150 LQE2014-121 Link to ES Tech. Rep. Archives: ED2014-93 CPM2014-150 LQE2014-121 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2014-11-27 - 2014-11-28 |
Place (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2014-11-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
MOCVD Gorwoth and characterization of nearly lattice-matched InAlN/AlGaN 2DEG heterostructures |
Sub Title (in English) |
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Keyword(1) |
InAlN/AlGaN heterostructures |
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MOCVD |
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two-dimensional-electron gas |
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1st Author's Name |
Shu Fujita |
1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. Tech.) |
2nd Author's Name |
Makoto Miyoshi |
2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. Tech.) |
3rd Author's Name |
Takashi Egawa |
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Nagoya Institute of Technology (Nagoya Inst. Tech.) |
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Speaker |
Author-1 |
Date Time |
2014-11-28 14:30:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2014-93, CPM2014-150, LQE2014-121 |
Volume (vol) |
vol.114 |
Number (no) |
no.336(ED), no.337(CPM), no.338(LQE) |
Page |
pp.97-102 |
#Pages |
6 |
Date of Issue |
2014-11-20 (ED, CPM, LQE) |
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