Paper Abstract and Keywords |
Presentation |
2014-11-28 09:55
MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz Shiro Toyoda (RIKEN/Saitama Univ.), Wataru Terashima (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN/Saitama Univ.) ED2014-84 CPM2014-141 LQE2014-112 Link to ES Tech. Rep. Archives: ED2014-84 CPM2014-141 LQE2014-112 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Terahertz quantum cascade lasers (THz-QCLs) are attracting attention for use as a lot of applications, because they are quite compact THz light sources which can achieve high output power, narrow line-width and continuous wave (C. W.) operation. GaN-based semiconductors which have huge longitudinal optical phonon energies are expected as materials to solve both problems of "Development of operational frequency range (5-12 THz)" and "Increase of operational temperature (>300 K)" on THz-QCLs. In this study, we grew GaN-based THz-QCL structures by using a metal organic chemical vapor deposition (MOCVD) and investigated their structural and optical properties. We found that the QC structure fabricated by the MOCVD has advantage over mosaic and threading dislocation density characteristics in comparison with those of the QC structure fabricated by a molecular beam epitaxy. We successfully realized lasing action at the unexplored frequency of 7 THz from a GaN-based THz-QCL. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MOCVD / THz / QCL / III-Nitride semiconductors / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 338, LQE2014-112, pp. 55-58, Nov. 2014. |
Paper # |
LQE2014-112 |
Date of Issue |
2014-11-20 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2014-84 CPM2014-141 LQE2014-112 Link to ES Tech. Rep. Archives: ED2014-84 CPM2014-141 LQE2014-112 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2014-11-27 - 2014-11-28 |
Place (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2014-11-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz |
Sub Title (in English) |
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Keyword(1) |
MOCVD |
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THz |
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QCL |
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III-Nitride semiconductors |
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1st Author's Name |
Shiro Toyoda |
1st Author's Affiliation |
RIKEN/Saitama University (RIKEN/Saitama Univ.) |
2nd Author's Name |
Wataru Terashima |
2nd Author's Affiliation |
RIKEN (RIKEN) |
3rd Author's Name |
Norihiko Kamata |
3rd Author's Affiliation |
Saitama University (Saitama Univ.) |
4th Author's Name |
Hideki Hirayama |
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RIKEN/Saitama University (RIKEN/Saitama Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-11-28 09:55:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2014-84, CPM2014-141, LQE2014-112 |
Volume (vol) |
vol.114 |
Number (no) |
no.336(ED), no.337(CPM), no.338(LQE) |
Page |
pp.55-58 |
#Pages |
4 |
Date of Issue |
2014-11-20 (ED, CPM, LQE) |
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