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Paper Abstract and Keywords
Presentation 2014-11-28 09:55
MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz
Shiro Toyoda (RIKEN/Saitama Univ.), Wataru Terashima (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN/Saitama Univ.) ED2014-84 CPM2014-141 LQE2014-112 Link to ES Tech. Rep. Archives: ED2014-84 CPM2014-141 LQE2014-112
Abstract (in Japanese) (See Japanese page) 
(in English) Terahertz quantum cascade lasers (THz-QCLs) are attracting attention for use as a lot of applications, because they are quite compact THz light sources which can achieve high output power, narrow line-width and continuous wave (C. W.) operation. GaN-based semiconductors which have huge longitudinal optical phonon energies are expected as materials to solve both problems of "Development of operational frequency range (5-12 THz)" and "Increase of operational temperature (>300 K)" on THz-QCLs. In this study, we grew GaN-based THz-QCL structures by using a metal organic chemical vapor deposition (MOCVD) and investigated their structural and optical properties. We found that the QC structure fabricated by the MOCVD has advantage over mosaic and threading dislocation density characteristics in comparison with those of the QC structure fabricated by a molecular beam epitaxy. We successfully realized lasing action at the unexplored frequency of 7 THz from a GaN-based THz-QCL.
Keyword (in Japanese) (See Japanese page) 
(in English) MOCVD / THz / QCL / III-Nitride semiconductors / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 338, LQE2014-112, pp. 55-58, Nov. 2014.
Paper # LQE2014-112 
Date of Issue 2014-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-84 CPM2014-141 LQE2014-112 Link to ES Tech. Rep. Archives: ED2014-84 CPM2014-141 LQE2014-112

Conference Information
Committee LQE ED CPM  
Conference Date 2014-11-27 - 2014-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2014-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz 
Sub Title (in English)  
Keyword(1) MOCVD  
Keyword(2) THz  
Keyword(3) QCL  
Keyword(4) III-Nitride semiconductors  
1st Author's Name Shiro Toyoda  
1st Author's Affiliation RIKEN/Saitama University (RIKEN/Saitama Univ.)
2nd Author's Name Wataru Terashima  
2nd Author's Affiliation RIKEN (RIKEN)
3rd Author's Name Norihiko Kamata  
3rd Author's Affiliation Saitama University (Saitama Univ.)
4th Author's Name Hideki Hirayama  
4th Author's Affiliation RIKEN/Saitama University (RIKEN/Saitama Univ.)
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Date Time 2014-11-28 09:55:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-ED2014-84,IEICE-CPM2014-141,IEICE-LQE2014-112 
Volume (vol) IEICE-114 
Number (no) no.336(ED), no.337(CPM), no.338(LQE) 
Page pp.55-58 
#Pages IEICE-4 
Date of Issue IEICE-ED-2014-11-20,IEICE-CPM-2014-11-20,IEICE-LQE-2014-11-20 

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