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Paper Abstract and Keywords
Presentation 2014-11-27 11:00
Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4
Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2014-74 CPM2014-131 LQE2014-102 Link to ES Tech. Rep. Archives: ED2014-74 CPM2014-131 LQE2014-102
Abstract (in Japanese) (See Japanese page) 
(in English) Metalorganic vapor phase epitaxy (MOVPE) of GaN-based materials on ScAlMgO4 (SCAM) substrates is demonstrated. SCAM has a rhombohedral structure with a six-fold symmetric (0001) plane. When nitride semiconductors are grown on the SCAM (0001) plane, GaN experiences a lattice mismatch as small as 1.8%, while InGaN with an In composition of 17% realizes the lattice matching. Therefore, a novel template of lattice-matched InGaN/SCAM is available for InGaN/InGaN heterostructures with higher In compositions, which will pave the way toward longer-wavelength optical devices. In this paper, we experimentally demonstrate that GaN on SCAM has qualities comparable to or even better than those of conventional GaN on sapphire, and unstrained, lattice-matched InGaN can be grown on SCAM by MOVPE.
Keyword (in Japanese) (See Japanese page) 
(in English) ScAlMgO4 / nitride semiconductor / lattice matching / metalorganic vapor phase epitaxy / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 338, LQE2014-102, pp. 5-8, Nov. 2014.
Paper # LQE2014-102 
Date of Issue 2014-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-74 CPM2014-131 LQE2014-102 Link to ES Tech. Rep. Archives: ED2014-74 CPM2014-131 LQE2014-102

Conference Information
Committee LQE ED CPM  
Conference Date 2014-11-27 - 2014-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Paper Information
Registration To LQE 
Conference Code 2014-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4 
Sub Title (in English)  
Keyword(1) ScAlMgO4  
Keyword(2) nitride semiconductor  
Keyword(3) lattice matching  
Keyword(4) metalorganic vapor phase epitaxy  
1st Author's Name Takuya Ozaki  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Mitsuru Funato  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Yoichi Kawakami  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
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Date Time 2014-11-27 11:00:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-ED2014-74,IEICE-CPM2014-131,IEICE-LQE2014-102 
Volume (vol) IEICE-114 
Number (no) no.336(ED), no.337(CPM), no.338(LQE) 
Page pp.5-8 
#Pages IEICE-4 
Date of Issue IEICE-ED-2014-11-20,IEICE-CPM-2014-11-20,IEICE-LQE-2014-11-20 

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