Paper Abstract and Keywords |
Presentation |
2014-11-27 11:00
Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4 Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2014-74 CPM2014-131 LQE2014-102 Link to ES Tech. Rep. Archives: ED2014-74 CPM2014-131 LQE2014-102 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Metalorganic vapor phase epitaxy (MOVPE) of GaN-based materials on ScAlMgO4 (SCAM) substrates is demonstrated. SCAM has a rhombohedral structure with a six-fold symmetric (0001) plane. When nitride semiconductors are grown on the SCAM (0001) plane, GaN experiences a lattice mismatch as small as 1.8%, while InGaN with an In composition of 17% realizes the lattice matching. Therefore, a novel template of lattice-matched InGaN/SCAM is available for InGaN/InGaN heterostructures with higher In compositions, which will pave the way toward longer-wavelength optical devices. In this paper, we experimentally demonstrate that GaN on SCAM has qualities comparable to or even better than those of conventional GaN on sapphire, and unstrained, lattice-matched InGaN can be grown on SCAM by MOVPE. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ScAlMgO4 / nitride semiconductor / lattice matching / metalorganic vapor phase epitaxy / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 338, LQE2014-102, pp. 5-8, Nov. 2014. |
Paper # |
LQE2014-102 |
Date of Issue |
2014-11-20 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2014-74 CPM2014-131 LQE2014-102 Link to ES Tech. Rep. Archives: ED2014-74 CPM2014-131 LQE2014-102 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2014-11-27 - 2014-11-28 |
Place (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2014-11-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4 |
Sub Title (in English) |
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Keyword(1) |
ScAlMgO4 |
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nitride semiconductor |
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lattice matching |
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metalorganic vapor phase epitaxy |
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1st Author's Name |
Takuya Ozaki |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Mitsuru Funato |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Yoichi Kawakami |
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Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-11-27 11:00:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2014-74, CPM2014-131, LQE2014-102 |
Volume (vol) |
vol.114 |
Number (no) |
no.336(ED), no.337(CPM), no.338(LQE) |
Page |
pp.5-8 |
#Pages |
4 |
Date of Issue |
2014-11-20 (ED, CPM, LQE) |
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