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Paper Abstract and Keywords
Presentation 2014-11-27 13:15
Emission characteristics of InGaN-MQW structures on m-plane GaN substrates
Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical), Atsushi Yamaguchi (Kanazawa Inst. of Tech.) ED2014-77 CPM2014-134 LQE2014-105 Link to ES Tech. Rep. Archives: ED2014-77 CPM2014-134 LQE2014-105
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the optical characteristics of InGaN QWs on m-plane GaN substrates in order to understand the reasons behind the emission intensity dependence on the wavelength and the irregular emission spectrum shape. The emission intensity from m-plane InGaN-QWs decreases and the emission spectra show the overlapping characteristics when the wavelength is longer than 410 nm. InGaN-QW structures were grown on the self-standing m-plane GaN substrates by MOCVD and inspected using polarized PL measurements. However valence band split in the band structure was not to be related to the overlapping spectrum. By suppression of the spectrum which have lower energy, light output efficiency increases and wavelength shift was eliminated.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN / m-plane / nonpolar / polarization / valence band splitting / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 338, LQE2014-105, pp. 19-22, Nov. 2014.
Paper # LQE2014-105 
Date of Issue 2014-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2014-77 CPM2014-134 LQE2014-105 Link to ES Tech. Rep. Archives: ED2014-77 CPM2014-134 LQE2014-105

Conference Information
Committee LQE ED CPM  
Conference Date 2014-11-27 - 2014-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2014-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Emission characteristics of InGaN-MQW structures on m-plane GaN substrates 
Sub Title (in English)  
Keyword(1) InGaN  
Keyword(2) m-plane  
Keyword(3) nonpolar  
Keyword(4) polarization  
Keyword(5) valence band splitting  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kaori Kurihara  
1st Author's Affiliation Mitsubishi Chemical corporation (Mitsubishi Chemical)
2nd Author's Name Satoru Nagao  
2nd Author's Affiliation Mitsubishi Chemical corporation (Mitsubishi Chemical)
3rd Author's Name Atsushi Yamaguchi  
3rd Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech.)
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Speaker Author-1 
Date Time 2014-11-27 13:15:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2014-77, CPM2014-134, LQE2014-105 
Volume (vol) vol.114 
Number (no) no.336(ED), no.337(CPM), no.338(LQE) 
Page pp.19-22 
#Pages
Date of Issue 2014-11-20 (ED, CPM, LQE) 


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