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| Presentation | 2014-11-06 11:20 Spice Model of SiC Power MOSFET (DioMOS) -- Modeling Methodology for Reverse Current-voltage Characteristics of SiC -- Tetsuya Yamamoto, Tetsuro Sawai, Nobuyuki Horikawa, Yoshihiko Kanzawa, Kenji Mizutani, Nobuyuki Otsuka, Eiji Fujii (Panasonic)  SDM2014-99 Link to ES Tech. Rep. Archives: SDM2014-99 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | This paper presents a novel methodology to design a compact but precise SPICE model which reproduces complete current-voltage (Ids-Vds) characteristics of Silicon Carbide (SiC) power devices. The methodology is based on duality relation between one function for the forward I-V characteristics and its inverse function for the reverse I-V characteristics. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiC MOSFET / SPICE model / body diode / reverse current-voltage characteristics / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 291, SDM2014-99, pp. 19-24, Nov. 2014. | |
| Paper # | SDM2014-99 | |
| Date of Issue | 2014-10-30 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2014-99 Link to ES Tech. Rep. Archives: SDM2014-99 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2014-11-06 - 2014-11-07 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit Simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Spice Model of SiC Power MOSFET (DioMOS) |
| Sub Title (in English) | Modeling Methodology for Reverse Current-voltage Characteristics of SiC |
| Keyword(1) | SiC MOSFET |
| Keyword(2) | SPICE model |
| Keyword(3) | body diode |
| Keyword(4) | reverse current-voltage characteristics |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tetsuya Yamamoto |
| 1st Author's Affiliation | Panasonic Corporation (Panasonic) |
| 2nd Author's Name | Tetsuro Sawai |
| 2nd Author's Affiliation | Panasonic Corporation (Panasonic) |
| 3rd Author's Name | Nobuyuki Horikawa |
| 3rd Author's Affiliation | Panasonic Corporation (Panasonic) |
| 4th Author's Name | Yoshihiko Kanzawa |
| 4th Author's Affiliation | Panasonic Corporation (Panasonic) |
| 5th Author's Name | Kenji Mizutani |
| 5th Author's Affiliation | Panasonic Corporation (Panasonic) |
| 6th Author's Name | Nobuyuki Otsuka |
| 6th Author's Affiliation | Panasonic Corporation (Panasonic) |
| 7th Author's Name | Eiji Fujii |
| 7th Author's Affiliation | Panasonic Corporation (Panasonic) |
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| Speaker | Author-1 |
| Date Time | 2014-11-06 11:20:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2014-99 |
| Volume (vol) | vol.114 |
| Number (no) | no.291 |
| Page | pp.19-24 |
| #Pages | 6 |
| Date of Issue | 2014-10-30 (SDM) |
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