Paper Abstract and Keywords |
Presentation |
2014-10-17 11:10
Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) SDM2014-91 Link to ES Tech. Rep. Archives: SDM2014-91 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices.
We achieved to grow Ge and Ge1-xSnx epitaxial films on Ge(001) substrates by metal-organic chemical vapor deposition (MOCVD) using tertiary-butyl-germane (t-C4H9GeH3) and tetraethyl-tin [(C2H5)4Sn].
These precursors are much safer than GeH4 and SnH4.
Thus, we believe that our techniques improve the safety in the deposition process.
In this paper, we investigated Ge and Ge1-xSnx epitaxial films grown in the various deposition conditions. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge / GeSn / Ge1-xSnx / MOCVD / MOVPE / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 255, SDM2014-91, pp. 41-45, Oct. 2014. |
Paper # |
SDM2014-91 |
Date of Issue |
2014-10-09 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2014-91 Link to ES Tech. Rep. Archives: SDM2014-91 |
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