Paper Abstract and Keywords |
Presentation |
2014-10-17 10:40
Initial stage of oxidation on 4H-SiC by AR-XPS using angle-resolved X-ray photoelectron spectroscopy Tomoya Sasago, Shunta Yamahori, Hiroshi Nohira (Tokyo City Univ.) SDM2014-90 Link to ES Tech. Rep. Archives: SDM2014-90 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated the initial stage of oxidation on C-face 4H-SiC using angle-resolved X-ray photoelectron spectroscopy. The sample was oxidized at 800°C or 850°C in dry oxygen. We investigated the oxide thickness and the change in chemical bonding state at SiO2/SiC interface. Analyses of Si 2p photoelectron spectra show that the oxidation rate changes periodically. This imply that the oxidation rate changes reflecting the crystal structure. Analyses of C 1s photoelectron spectra show that the amount of C-O in oxide becomes the minimum at the oxide thickness of about 0.85 nm. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
4H-SiC C-face / Angle-resolved X-ray Photoelectron Spectroscopy / Initial Stage of Oxidation / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 255, SDM2014-90, pp. 35-39, Oct. 2014. |
Paper # |
SDM2014-90 |
Date of Issue |
2014-10-09 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2014-90 Link to ES Tech. Rep. Archives: SDM2014-90 |
Conference Information |
Committee |
SDM |
Conference Date |
2014-10-16 - 2014-10-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niche, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2014-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Initial stage of oxidation on 4H-SiC by AR-XPS using angle-resolved X-ray photoelectron spectroscopy |
Sub Title (in English) |
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Keyword(1) |
4H-SiC C-face |
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Angle-resolved X-ray Photoelectron Spectroscopy |
Keyword(3) |
Initial Stage of Oxidation |
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1st Author's Name |
Tomoya Sasago |
1st Author's Affiliation |
Tokyo City University (Tokyo City Univ.) |
2nd Author's Name |
Shunta Yamahori |
2nd Author's Affiliation |
Tokyo City University (Tokyo City Univ.) |
3rd Author's Name |
Hiroshi Nohira |
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Tokyo City University (Tokyo City Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-10-17 10:40:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
SDM2014-90 |
Volume (vol) |
vol.114 |
Number (no) |
no.255 |
Page |
pp.35-39 |
#Pages |
5 |
Date of Issue |
2014-10-09 (SDM) |