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| Presentation | 2014-09-05 09:55 Quantum Efficiency and Life Time of GaN and InGaN with NEA-surface Daiki Sato, Tomohiro Nishitani, Takuya Maekawa, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)  CPM2014-84 Link to ES Tech. Rep. Archives: CPM2014-84 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The photocathode using Negative Electron Affinity (NEA) surface on a semiconductor has been applied for science technologies such as an elemental particle experiment as an electron beam source. Yet, since NEA-surface is fragile, it is necessary to figure out how to make its life time longer in order to develop new technologies. Then, we realized that considering the band gap in semiconductor, the life time becomes longer as the negative affinity goes even smaller. Therefore, we produced the photocathodes using GaN and InGaN that have wider band gaps than that of GaAs. As a result, using GaN and InGaN, we gained 17 times and 7 times longer life time NEA-surface than that of GaAs, respectively. On the other hand, the result indicates that we can produce the NEA-surface with only cesium. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / InGaN / GaAs / Photo-cathode / NEA / electron beam source / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 202, CPM2014-84, pp. 49-54, Sept. 2014. | |
| Paper # | CPM2014-84 | |
| Date of Issue | 2014-08-28 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2014-84 Link to ES Tech. Rep. Archives: CPM2014-84 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2014-09-04 - 2014-09-05 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | The 100th Anniversary Hall, Yamagata University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2014-09-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Quantum Efficiency and Life Time of GaN and InGaN with NEA-surface |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | InGaN |
| Keyword(3) | GaAs |
| Keyword(4) | Photo-cathode |
| Keyword(5) | NEA |
| Keyword(6) | electron beam source |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Daiki Sato |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Tomohiro Nishitani |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Takuya Maekawa |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Yoshio Honda |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | Hiroshi Amano |
| 5th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2014-09-05 09:55:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2014-84 |
| Volume (vol) | vol.114 |
| Number (no) | no.202 |
| Page | pp.49-54 |
| #Pages | 6 |
| Date of Issue | 2014-08-28 (CPM) |
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