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| Presentation | 2014-08-05 09:50 Statistical Analysis of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo)  SDM2014-72 ICD2014-41 Link to ES Tech. Rep. Archives: SDM2014-72 ICD2014-41 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The minimum operation voltage (Vmin) of fully depleted (FD) silicon-on-thin-BOX (SOTB) SRAM cells are measured and statistically analyzed. It is newly found that Vmin deviates from a normal distribution and follows a log-normal distribution. Furthermore, it is found that the behaviors of the worst Vmin are different from the median Vmin or static noise margin (SNM), indicating that cell stability of high density SRAM must be judged by the worst Vmin. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Variability / Minimum Operation Voltage / FD SOI / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 174, SDM2014-72, pp. 55-58, Aug. 2014. | |
| Paper # | SDM2014-72 | |
| Date of Issue | 2014-07-28 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2014-72 ICD2014-41 Link to ES Tech. Rep. Archives: SDM2014-72 ICD2014-41 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2014-08-04 - 2014-08-05 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ., Multimedia Education Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-08-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Statistical Analysis of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells |
| Sub Title (in English) | |
| Keyword(1) | Variability |
| Keyword(2) | Minimum Operation Voltage |
| Keyword(3) | FD SOI |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tomoko Mizutani |
| 1st Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name | Yoshiki Yamamoto |
| 2nd Author's Affiliation | Low-power Electronics Association & Project (LEAP) |
| 3rd Author's Name | Hideki Makiyama |
| 3rd Author's Affiliation | Low-power Electronics Association & Project (LEAP) |
| 4th Author's Name | Tomohiro Yamashita |
| 4th Author's Affiliation | Low-power Electronics Association & Project (LEAP) |
| 5th Author's Name | Hidekazu Oda |
| 5th Author's Affiliation | Low-power Electronics Association & Project (LEAP) |
| 6th Author's Name | Shiro Kamohara |
| 6th Author's Affiliation | Low-power Electronics Association & Project (LEAP) |
| 7th Author's Name | Nobuyuki Sugii |
| 7th Author's Affiliation | Low-power Electronics Association & Project (LEAP) |
| 8th Author's Name | Toshiro Hiramoto |
| 8th Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2014-08-05 09:50:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2014-72, ICD2014-41 |
| Volume (vol) | vol.114 |
| Number (no) | no.174(SDM), no.175(ICD) |
| Page | pp.55-58 |
| #Pages | 4 |
| Date of Issue | 2014-07-28 (SDM, ICD) |
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