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Paper Abstract and Keywords
Presentation 2014-08-05 09:50
Statistical Analysis of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells
Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) Link to ES Tech. Rep. Archives: SDM2014-72 ICD2014-41
Abstract (in Japanese) (See Japanese page) 
(in English) The minimum operation voltage (Vmin) of fully depleted (FD) silicon-on-thin-BOX (SOTB) SRAM cells are measured and statistically analyzed. It is newly found that Vmin deviates from a normal distribution and follows a log-normal distribution. Furthermore, it is found that the behaviors of the worst Vmin are different from the median Vmin or static noise margin (SNM), indicating that cell stability of high density SRAM must be judged by the worst Vmin.
Keyword (in Japanese) (See Japanese page) 
(in English) Variability / Minimum Operation Voltage / FD SOI / / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 174, SDM2014-72, pp. 55-58, Aug. 2014.
Paper # SDM2014-72 
Date of Issue 2014-07-28 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Conference Information
Committee ICD SDM  
Conference Date 2014-08-04 - 2014-08-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Multimedia Education Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2014-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Statistical Analysis of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells 
Sub Title (in English)  
Keyword(1) Variability  
Keyword(2) Minimum Operation Voltage  
Keyword(3) FD SOI  
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1st Author's Name Tomoko Mizutani  
1st Author's Affiliation The University of Tokyo (Univ. of Tokyo)
2nd Author's Name Yoshiki Yamamoto  
2nd Author's Affiliation Low-power Electronics Association & Project (LEAP)
3rd Author's Name Hideki Makiyama  
3rd Author's Affiliation Low-power Electronics Association & Project (LEAP)
4th Author's Name Tomohiro Yamashita  
4th Author's Affiliation Low-power Electronics Association & Project (LEAP)
5th Author's Name Hidekazu Oda  
5th Author's Affiliation Low-power Electronics Association & Project (LEAP)
6th Author's Name Shiro Kamohara  
6th Author's Affiliation Low-power Electronics Association & Project (LEAP)
7th Author's Name Nobuyuki Sugii  
7th Author's Affiliation Low-power Electronics Association & Project (LEAP)
8th Author's Name Toshiro Hiramoto  
8th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
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Speaker
Date Time 2014-08-05 09:50:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2014-72,IEICE-ICD2014-41 
Volume (vol) IEICE-114 
Number (no) no.174(SDM), no.175(ICD) 
Page pp.55-58 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2014-07-28,IEICE-ICD-2014-07-28 


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