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Paper Abstract and Keywords
Presentation 2014-08-05 13:05
[Invited Talk] Oxide Semiconductor-based Transistors Formed in LSI Interconnects
Hiroshi Sunamura, Naoya Furutake, Shinobu Saito, Mitsuru Narihiro, Yoshihiro Hayashi (REL) Link to ES Tech. Rep. Archives: SDM2014-76 ICD2014-45
Abstract (in Japanese) (See Japanese page) 
(in English) We report on the latest progress on our proposed new transistor technology called BEOL-FET, in which we form oxide-based transistors in LSI interconnects, aiming at compact on-chip high-voltage interface realization. NFETs using wide-gap amorphous oxide semiconductor InGaZnO (IGZO, 3.3eV) as channel, are shown to exhibit normally-off characteristics, high mobility and high on/off ratio. A lower ARon has been achieved and is now lower than Si-LDMOS. We also report on our work on complementary FET enablement for making these devices applicable to wider range of applications. Cu-process-compatible PFETs are realized with high on/off ratio using amorphous SnO and demonstrate complementary inverter operation with NFET/PFET integrated on the same interconnect level. 6T-SRAM operation was verified as a first step towards BEOL-CMOS logic circuits.
Keyword (in Japanese) (See Japanese page) 
(in English) BEOL-Tr / BEOL-FET / oxide semiconductor / high-VBD / pre-driver / IGZO / SnO / CMOS  
Reference Info. IEICE Tech. Rep., vol. 114, no. 174, SDM2014-76, pp. 77-82, Aug. 2014.
Paper # SDM2014-76 
Date of Issue 2014-07-28 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Conference Information
Committee ICD SDM  
Conference Date 2014-08-04 - 2014-08-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Multimedia Education Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2014-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Oxide Semiconductor-based Transistors Formed in LSI Interconnects 
Sub Title (in English)  
Keyword(1) BEOL-Tr  
Keyword(2) BEOL-FET  
Keyword(3) oxide semiconductor  
Keyword(4) high-VBD  
Keyword(5) pre-driver  
Keyword(6) IGZO  
Keyword(7) SnO  
Keyword(8) CMOS  
1st Author's Name Hiroshi Sunamura  
1st Author's Affiliation Renesas Electronics Corporation (REL)
2nd Author's Name Naoya Furutake  
2nd Author's Affiliation Renesas Electronics Corporation (REL)
3rd Author's Name Shinobu Saito  
3rd Author's Affiliation Renesas Electronics Corporation (REL)
4th Author's Name Mitsuru Narihiro  
4th Author's Affiliation Renesas Electronics Corporation (REL)
5th Author's Name Yoshihiro Hayashi  
5th Author's Affiliation Renesas Electronics Corporation (REL)
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Speaker
Date Time 2014-08-05 13:05:00 
Presentation Time 50 
Registration for SDM 
Paper # IEICE-SDM2014-76,IEICE-ICD2014-45 
Volume (vol) IEICE-114 
Number (no) no.174(SDM), no.175(ICD) 
Page pp.77-82 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2014-07-28,IEICE-ICD-2014-07-28 


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