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Paper Abstract and Keywords
Presentation 2014-08-04 13:05
[Invited Talk] Research progress in steep slope devices and technologies to enhance ON current in TFETs
Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST) Link to ES Tech. Rep. Archives: SDM2014-67 ICD2014-36
Abstract (in Japanese) (See Japanese page) 
(in English) Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recent research progress in SSDs. Tunnel field-effect transistor (TFET), which is the front runner in SSDs, has a problem in their ON current. There are two ways to enhance the ON current; one is by enhancing electric-field at the junction, and another is by realizing high tunneling probability.
Keyword (in Japanese) (See Japanese page) 
(in English) Steep slope devices / tunnel field-effect transistor / synthetic electric field / isoelectronic trap / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 174, SDM2014-67, pp. 29-34, Aug. 2014.
Paper # SDM2014-67 
Date of Issue 2014-07-28 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Conference Information
Committee ICD SDM  
Conference Date 2014-08-04 - 2014-08-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Multimedia Education Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2014-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Research progress in steep slope devices and technologies to enhance ON current in TFETs 
Sub Title (in English)  
Keyword(1) Steep slope devices  
Keyword(2) tunnel field-effect transistor  
Keyword(3) synthetic electric field  
Keyword(4) isoelectronic trap  
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1st Author's Name Takahiro Mori  
1st Author's Affiliation National Insutitute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Yukinori Morita  
2nd Author's Affiliation National Insutitute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Shinji Migita  
3rd Author's Affiliation National Insutitute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Wataru Mizubayashi  
4th Author's Affiliation National Insutitute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Koichi Fukuda  
5th Author's Affiliation National Insutitute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Noriyuki Miyata  
6th Author's Affiliation National Insutitute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Tetsuji Yasuda  
7th Author's Affiliation National Insutitute of Advanced Industrial Science and Technology (AIST)
8th Author's Name Meishoku Masahara  
8th Author's Affiliation National Insutitute of Advanced Industrial Science and Technology (AIST)
9th Author's Name Hiroyuki Ota  
9th Author's Affiliation National Insutitute of Advanced Industrial Science and Technology (AIST)
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Speaker
Date Time 2014-08-04 13:05:00 
Presentation Time 50 
Registration for SDM 
Paper # IEICE-SDM2014-67,IEICE-ICD2014-36 
Volume (vol) IEICE-114 
Number (no) no.174(SDM), no.175(ICD) 
Page pp.29-34 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2014-07-28,IEICE-ICD-2014-07-28 


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