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Paper Abstract and Keywords
Presentation 2014-08-01 15:50
Band offset at Al2O3/β-Ga2O3 Heterojunctions
Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2014-60 Link to ES Tech. Rep. Archives: ED2014-60
Abstract (in Japanese) (See Japanese page) 
(in English) The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8±0.2 eV measured for Al2O3, the conduction and valence band offsets at the interface were estimated to be 1.5±0.2 eV and 0.7±0.2 eV, respectively. The conduction band offset was also obtained from tunneling current in Au/Al2O3/n-Ga2O3 ("2" ̅01) metal-oxide-semiconductor (MOS) diodes using the Fowler-Nordheim model. The electrically extracted value was in good agreement with the XPS data. Furthermore, the MOS diodes exhibited small capacitance-voltage hysteresis loops, indicating the successful engineering of a high-quality Al2O3/Ga2O3 interface.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium oxide / band alignment / x-ray photoelectron spectroscopy / tunneling current / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 168, ED2014-60, pp. 41-46, Aug. 2014.
Paper # ED2014-60 
Date of Issue 2014-07-25 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-60 Link to ES Tech. Rep. Archives: ED2014-60

Conference Information
Committee ED  
Conference Date 2014-08-01 - 2014-08-01 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. B3-1 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Process and Devices (surface, interface, reliability), others 
Paper Information
Registration To ED 
Conference Code 2014-08-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Band offset at Al2O3/β-Ga2O3 Heterojunctions 
Sub Title (in English)  
Keyword(1) Gallium oxide  
Keyword(2) band alignment  
Keyword(3) x-ray photoelectron spectroscopy  
Keyword(4) tunneling current  
1st Author's Name Takafumi Kamimura  
1st Author's Affiliation National institute of information and communications technology (NICT)
2nd Author's Name Kohei Sasaki  
2nd Author's Affiliation Tamura Corporation (Tamura Corp.)
3rd Author's Name Man Hoi Wong  
3rd Author's Affiliation National institute of information and communications technology (NICT)
4th Author's Name Daivasigamani Krishnamurthy  
4th Author's Affiliation National institute of information and communications technology (NICT)
5th Author's Name Akito Kuramata  
5th Author's Affiliation Tamura Corporation (Tamura Corp.)
6th Author's Name Takekazu Masui  
6th Author's Affiliation Koha Co., Ltd. (Koha Co., Ltd.)
7th Author's Name Shigenobu Yamakoshi  
7th Author's Affiliation Tamura Corporation (Tamura Corp.)
8th Author's Name Masataka Higashiwaki  
8th Author's Affiliation National institute of information and communications technology (NICT)
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Date Time 2014-08-01 15:50:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2014-60 
Volume (vol) IEICE-114 
Number (no) no.168 
Page pp.41-46 
#Pages IEICE-6 
Date of Issue IEICE-ED-2014-07-25 

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