Paper Abstract and Keywords |
Presentation |
2014-08-01 14:45
Improvement of Off-State Characteristics with a P-Type Capping Layer in GaAs JPHEMT Katsuhiko Takeuchi, Satoshi Taniguchi, Masashi Yanagita (Sony), Yuji Sasaki, Mitsuhiro Nakamura (Sony Semiconductor), Shinichi Wada (Sony) ED2014-58 Link to ES Tech. Rep. Archives: ED2014-58 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Due to its low insertion loss and the high linearity, the JPHEMT is widely used for RF switches in wireless communications. In this paper, we describe a JPHEMT with a p-type capping layer from the gate to source/drain regions for improving the off-state characteristics. The device parameters of the p-layer are optimized using device simulation technology to enhance the off-state characteristics. It has been demonstrated that BVgs is 11 V higher, Coff is 25 % lower, the power handling capability is better and the 3rd harmonic distortion is 6 dB lower than those of the conventional JPHEMT. The obtained Ron*Coff product of 138 fsec is very favorable compared with RF switches based upon conventional JPHEMT and SOI technologies. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
JPHEMT / RF switch / Ron*Coff product / harmonic distortion / power handling capability / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 168, ED2014-58, pp. 29-34, Aug. 2014. |
Paper # |
ED2014-58 |
Date of Issue |
2014-07-25 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2014-58 Link to ES Tech. Rep. Archives: ED2014-58 |
Conference Information |
Committee |
ED |
Conference Date |
2014-08-01 - 2014-08-01 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. B3-1 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Semiconductor Process and Devices (surface, interface, reliability), others |
Paper Information |
Registration To |
ED |
Conference Code |
2014-08-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Improvement of Off-State Characteristics with a P-Type Capping Layer in GaAs JPHEMT |
Sub Title (in English) |
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Keyword(1) |
JPHEMT |
Keyword(2) |
RF switch |
Keyword(3) |
Ron*Coff product |
Keyword(4) |
harmonic distortion |
Keyword(5) |
power handling capability |
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1st Author's Name |
Katsuhiko Takeuchi |
1st Author's Affiliation |
Sony Corporation (Sony) |
2nd Author's Name |
Satoshi Taniguchi |
2nd Author's Affiliation |
Sony Corporation (Sony) |
3rd Author's Name |
Masashi Yanagita |
3rd Author's Affiliation |
Sony Corporation (Sony) |
4th Author's Name |
Yuji Sasaki |
4th Author's Affiliation |
Sony Semiconductor Corporation (Sony Semiconductor) |
5th Author's Name |
Mitsuhiro Nakamura |
5th Author's Affiliation |
Sony Semiconductor Corporation (Sony Semiconductor) |
6th Author's Name |
Shinichi Wada |
6th Author's Affiliation |
Sony Corporation (Sony) |
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Speaker |
Author-1 |
Date Time |
2014-08-01 14:45:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2014-58 |
Volume (vol) |
vol.114 |
Number (no) |
no.168 |
Page |
pp.29-34 |
#Pages |
6 |
Date of Issue |
2014-07-25 (ED) |
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