Paper Abstract and Keywords |
Presentation |
2014-08-01 16:15
HAXPES Analysis for GaAs Surface State for Electronics Devices Yoshihiro Saito, Daisuke Tsurumi, Junji Iihara, Aiko Tominaga, Takumi Yonemura, Koji Yamaguchi (SEI) ED2014-61 Link to ES Tech. Rep. Archives: ED2014-61 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Abstract The surface states of GaAs have been characterized, by using the hard x-ray photoemission spectroscopy (HAXPES) technique. To investigate the effect of the oxide on the surface state, two specimens with different quantities of surface oxide were prepared. The HAXPES measurements of Ga2p3/2 and As2p3/2 clarified that, in the specimen with more quantity of oxide, the binding energies of both orbitals were lowered by approximately 0.2 eV. The binding energy shift demonstrates the existence of negative charge at the GaAs surface and the most probable origin of the electron traps is the oxide on GaAs surface. Controlling the oxide quantity is expected to lead to GaAs high electron mobility transistors (HEMTs) with excellent breakdown voltage. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaAs / HEMT / HAXPES / Surface Trap / Oxide / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 168, ED2014-61, pp. 47-50, Aug. 2014. |
Paper # |
ED2014-61 |
Date of Issue |
2014-07-25 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2014-61 Link to ES Tech. Rep. Archives: ED2014-61 |
Conference Information |
Committee |
ED |
Conference Date |
2014-08-01 - 2014-08-01 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. B3-1 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Semiconductor Process and Devices (surface, interface, reliability), others |
Paper Information |
Registration To |
ED |
Conference Code |
2014-08-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
HAXPES Analysis for GaAs Surface State for Electronics Devices |
Sub Title (in English) |
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Keyword(1) |
GaAs |
Keyword(2) |
HEMT |
Keyword(3) |
HAXPES |
Keyword(4) |
Surface Trap |
Keyword(5) |
Oxide |
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1st Author's Name |
Yoshihiro Saito |
1st Author's Affiliation |
Sumitomo Electric Industries (SEI) |
2nd Author's Name |
Daisuke Tsurumi |
2nd Author's Affiliation |
Sumitomo Electric Industries (SEI) |
3rd Author's Name |
Junji Iihara |
3rd Author's Affiliation |
Sumitomo Electric Industries (SEI) |
4th Author's Name |
Aiko Tominaga |
4th Author's Affiliation |
Sumitomo Electric Industries (SEI) |
5th Author's Name |
Takumi Yonemura |
5th Author's Affiliation |
Sumitomo Electric Industries (SEI) |
6th Author's Name |
Koji Yamaguchi |
6th Author's Affiliation |
Sumitomo Electric Industries (SEI) |
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Speaker |
Author-1 |
Date Time |
2014-08-01 16:15:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2014-61 |
Volume (vol) |
vol.114 |
Number (no) |
no.168 |
Page |
pp.47-50 |
#Pages |
4 |
Date of Issue |
2014-07-25 (ED) |
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