| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2014-08-01 13:30 [Invited Talk] InGaAs MOSFET Source Structures Toward High Speed/low Power Applications Yasuyuki Miyamoto, Toru Kanazawa, Yoshiharu Yonai, Atsushi Kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi (Tokyo Inst. of Tech.)  ED2014-56 Link to ES Tech. Rep. Archives: ED2014-56 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Abstract High on-currents (I_{on}) and low off-currents (I_{off}) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high I_{on} in InGaAs MOSFETs, and I_D = 2.4 mA/$myu$m at V_D = 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low I_{off}. Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high I_{on} and low I_{off} realization. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InGaAs MOSFETs / Source structure / Tunnel FET / Super-lattice source / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 168, ED2014-56, pp. 19-24, Aug. 2014. | |
| Paper # | ED2014-56 | |
| Date of Issue | 2014-07-25 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2014-56 Link to ES Tech. Rep. Archives: ED2014-56 |
|
| Conference Information | |
| Committee | ED |
| Conference Date | 2014-08-01 - 2014-08-01 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. B3-1 |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Semiconductor Process and Devices (surface, interface, reliability), others |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2014-08-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | InGaAs MOSFET Source Structures Toward High Speed/low Power Applications |
| Sub Title (in English) | |
| Keyword(1) | InGaAs MOSFETs |
| Keyword(2) | Source structure |
| Keyword(3) | Tunnel FET |
| Keyword(4) | Super-lattice source |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yasuyuki Miyamoto |
| 1st Author's Affiliation | Tokyo Institute of Technoloy (Tokyo Inst. of Tech.) |
| 2nd Author's Name | Toru Kanazawa |
| 2nd Author's Affiliation | Tokyo Institute of Technoloy (Tokyo Inst. of Tech.) |
| 3rd Author's Name | Yoshiharu Yonai |
| 3rd Author's Affiliation | Tokyo Institute of Technoloy (Tokyo Inst. of Tech.) |
| 4th Author's Name | Atsushi Kato |
| 4th Author's Affiliation | Tokyo Institute of Technoloy (Tokyo Inst. of Tech.) |
| 5th Author's Name | Motohiko Fujimatsu |
| 5th Author's Affiliation | Tokyo Institute of Technoloy (Tokyo Inst. of Tech.) |
| 6th Author's Name | Masashi Kashiwano |
| 6th Author's Affiliation | Tokyo Institute of Technoloy (Tokyo Inst. of Tech.) |
| 7th Author's Name | Kazuto Ohsawa |
| 7th Author's Affiliation | Tokyo Institute of Technoloy (Tokyo Inst. of Tech.) |
| 8th Author's Name | Kazumi Ohashi |
| 8th Author's Affiliation | Tokyo Institute of Technoloy (Tokyo Inst. of Tech.) |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2014-08-01 13:30:00 |
| Presentation Time | 50 minutes |
| Registration for | ED |
| Paper # | ED2014-56 |
| Volume (vol) | vol.114 |
| Number (no) | no.168 |
| Page | pp.19-24 |
| #Pages | 6 |
| Date of Issue | 2014-07-25 (ED) |
[Return to Top Page]