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Paper Abstract and Keywords
Presentation 2014-08-01 10:30
[Invited Talk] Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection
Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.) ED2014-53 Link to ES Tech. Rep. Archives: ED2014-53
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed highly sensitive backward diodes instead of conventional Schottky diodes for millimeter-wave detection. The backward diodes consisted of p-GaAsSb/i-InAlAs/n-InGaAs layers which were lattice matched to InP substrate. They can operate at room temperature and zero-bias condition. We achieved a large nonlinear characteristic which exceed that of ideal Schottky diodes. Furthermore, sensitivity of 20,000 V/W was obtained at 94 GHz when doping concentration in the backward diodes was optimized. We believe that extremely sensitive millimeter-wave receiver could be realized by integrating the backward diodes with InP-based HEMTs.
Keyword (in Japanese) (See Japanese page) 
(in English) tunnel diode / backward / millimeter wave / nonlinearity / GaAsSb / zero bias / detector / sensitivity  
Reference Info. IEICE Tech. Rep., vol. 114, no. 168, ED2014-53, pp. 1-6, Aug. 2014.
Paper # ED2014-53 
Date of Issue 2014-07-25 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-53 Link to ES Tech. Rep. Archives: ED2014-53

Conference Information
Committee ED  
Conference Date 2014-08-01 - 2014-08-01 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. B3-1 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Process and Devices (surface, interface, reliability), others 
Paper Information
Registration To ED 
Conference Code 2014-07-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection 
Sub Title (in English)  
Keyword(1) tunnel diode  
Keyword(2) backward  
Keyword(3) millimeter wave  
Keyword(4) nonlinearity  
Keyword(5) GaAsSb  
Keyword(6) zero bias  
Keyword(7) detector  
Keyword(8) sensitivity  
1st Author's Name Tsuyoshi Takahashi  
1st Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
2nd Author's Name Masaru Sato  
2nd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
3rd Author's Name Yasuhiro Nakasha  
3rd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
4th Author's Name Shoichi Shiba  
4th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
5th Author's Name Naoki Hara  
5th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
6th Author's Name Taisuke Iwai  
6th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
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Speaker Author-1 
Date Time 2014-08-01 10:30:00 
Presentation Time 50 minutes 
Registration for ED 
Paper # ED2014-53 
Volume (vol) vol.114 
Number (no) no.168 
Page pp.1-6 
#Pages
Date of Issue 2014-07-25 (ED) 


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