Paper Abstract and Keywords |
Presentation |
2014-08-01 10:30
[Invited Talk]
Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.) ED2014-53 Link to ES Tech. Rep. Archives: ED2014-53 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have developed highly sensitive backward diodes instead of conventional Schottky diodes for millimeter-wave detection. The backward diodes consisted of p-GaAsSb/i-InAlAs/n-InGaAs layers which were lattice matched to InP substrate. They can operate at room temperature and zero-bias condition. We achieved a large nonlinear characteristic which exceed that of ideal Schottky diodes. Furthermore, sensitivity of 20,000 V/W was obtained at 94 GHz when doping concentration in the backward diodes was optimized. We believe that extremely sensitive millimeter-wave receiver could be realized by integrating the backward diodes with InP-based HEMTs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
tunnel diode / backward / millimeter wave / nonlinearity / GaAsSb / zero bias / detector / sensitivity |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 168, ED2014-53, pp. 1-6, Aug. 2014. |
Paper # |
ED2014-53 |
Date of Issue |
2014-07-25 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2014-53 Link to ES Tech. Rep. Archives: ED2014-53 |
Conference Information |
Committee |
ED |
Conference Date |
2014-08-01 - 2014-08-01 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. B3-1 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Semiconductor Process and Devices (surface, interface, reliability), others |
Paper Information |
Registration To |
ED |
Conference Code |
2014-07-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection |
Sub Title (in English) |
|
Keyword(1) |
tunnel diode |
Keyword(2) |
backward |
Keyword(3) |
millimeter wave |
Keyword(4) |
nonlinearity |
Keyword(5) |
GaAsSb |
Keyword(6) |
zero bias |
Keyword(7) |
detector |
Keyword(8) |
sensitivity |
1st Author's Name |
Tsuyoshi Takahashi |
1st Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
2nd Author's Name |
Masaru Sato |
2nd Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
3rd Author's Name |
Yasuhiro Nakasha |
3rd Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
4th Author's Name |
Shoichi Shiba |
4th Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
5th Author's Name |
Naoki Hara |
5th Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
6th Author's Name |
Taisuke Iwai |
6th Author's Affiliation |
Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
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Speaker |
Author-1 |
Date Time |
2014-08-01 10:30:00 |
Presentation Time |
50 minutes |
Registration for |
ED |
Paper # |
ED2014-53 |
Volume (vol) |
vol.114 |
Number (no) |
no.168 |
Page |
pp.1-6 |
#Pages |
6 |
Date of Issue |
2014-07-25 (ED) |
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