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Paper Abstract and Keywords
Presentation 2014-08-01 11:45
Analysis of effects of dislocation scattering on device characteristics of InSb HEMT
Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS) ED2014-55 Link to ES Tech. Rep. Archives: ED2014-55
Abstract (in Japanese) (See Japanese page) 
(in English) To analyze the effects of the dislocation scattering on the device characteristics of the InSb HEMT, we introduce the dislocation scattering in the quantum corrected Monte Carlo (QC-MC) simulation. The dislocation scattering plays a dominant role at the low electric field, and it becomes more serious when the electric density is low. However, the dislocation scattering has lesser influence on gm,max, therefore the InSb HEMT exhibits the high fT more than 1,500 GHz even under the influence of the dislocation scattering. This result shows the InSb HEMT is promising for the terahertz operation.
Keyword (in Japanese) (See Japanese page) 
(in English) InSb / HEMT / dislocation scattering / Quantum-Corrected monte carlo method / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 168, ED2014-55, pp. 13-18, Aug. 2014.
Paper # ED2014-55 
Date of Issue 2014-07-25 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-55 Link to ES Tech. Rep. Archives: ED2014-55

Conference Information
Committee ED  
Conference Date 2014-08-01 - 2014-08-01 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. B3-1 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Process and Devices (surface, interface, reliability), others 
Paper Information
Registration To ED 
Conference Code 2014-08-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of effects of dislocation scattering on device characteristics of InSb HEMT 
Sub Title (in English)  
Keyword(1) InSb  
Keyword(2) HEMT  
Keyword(3) dislocation scattering  
Keyword(4) Quantum-Corrected monte carlo method  
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1st Author's Name Shota Hatsushiba  
1st Author's Affiliation Tokyo University of science (TUS)
2nd Author's Name Shohei Nagai  
2nd Author's Affiliation Tokyo University of science (TUS)
3rd Author's Name Sachie Fujikawa  
3rd Author's Affiliation Tokyo University of science (TUS)
4th Author's Name Shinsuke Hara  
4th Author's Affiliation National Institute of Information and Communications (NICT)
5th Author's Name Akira Endoh  
5th Author's Affiliation National Institute of Information and Communications (NICT)
6th Author's Name Issei Watanabe  
6th Author's Affiliation National Institute of Information and Communications (NICT)
7th Author's Name Akifumi Kasamatsu  
7th Author's Affiliation National Institute of Information and Communications (NICT)
8th Author's Name Hiroki I. Fujishiro  
8th Author's Affiliation Tokyo University of science (TUS)
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Speaker Author-1 
Date Time 2014-08-01 11:45:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2014-55 
Volume (vol) vol.114 
Number (no) no.168 
Page pp.13-18 
#Pages
Date of Issue 2014-07-25 (ED) 


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