Paper Abstract and Keywords |
Presentation |
2014-08-01 11:45
Analysis of effects of dislocation scattering on device characteristics of InSb HEMT Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS) ED2014-55 Link to ES Tech. Rep. Archives: ED2014-55 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
To analyze the effects of the dislocation scattering on the device characteristics of the InSb HEMT, we introduce the dislocation scattering in the quantum corrected Monte Carlo (QC-MC) simulation. The dislocation scattering plays a dominant role at the low electric field, and it becomes more serious when the electric density is low. However, the dislocation scattering has lesser influence on gm,max, therefore the InSb HEMT exhibits the high fT more than 1,500 GHz even under the influence of the dislocation scattering. This result shows the InSb HEMT is promising for the terahertz operation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InSb / HEMT / dislocation scattering / Quantum-Corrected monte carlo method / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 168, ED2014-55, pp. 13-18, Aug. 2014. |
Paper # |
ED2014-55 |
Date of Issue |
2014-07-25 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2014-55 Link to ES Tech. Rep. Archives: ED2014-55 |
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