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| Presentation | 2014-06-20 15:00 Improvement of Electrical Properties of n-ZnO/p-CuO Heterojunctions Prepared by Chemical Bath Deposition -- Insertion of Intermediate Layer and Thermal Annealing -- Tomoaki Terasako, Toshihiro Murakami, Atsushi Hyouodou, Sho Shirakata (Ehime Univ.)  EMD2014-19 CPM2014-39 OME2014-27 Link to ES Tech. Rep. Archives: EMD2014-19 CPM2014-39 OME2014-27 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Electrical properties of n-ZnO/p-CuO heterojunctions prepared by chemical bath deposition were investigated. The insertion of intermediate layer, such as ZnO layer grown by dip-coating, was found to be effective for suppressing leakage current. For the ZnO/Dip-coating ZnO/CuO heterojunctions, the threshold voltage Vth and ideality factor n of the J–V curve and the built-in potential Vbi determined from the C–V curve had minima around the post-annealing temperature for CuO layer (TA) of 250 ℃. Relatively low IF/IR values (IF: forward current, IR: reverse current) at TAs higher than TA=225 ℃suggest the contribution of the tunnel current through the defect states to the reduction of the Vth and Vbi. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Chemical bath deposition / ZnO / CuO / pn heterojunction / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 95, CPM2014-39, pp. 61-66, June 2014. | |
| Paper # | CPM2014-39 | |
| Date of Issue | 2014-06-13 (EMD, CPM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EMD2014-19 CPM2014-39 OME2014-27 Link to ES Tech. Rep. Archives: EMD2014-19 CPM2014-39 OME2014-27 |
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| Conference Information | |
| Committee | OME EMD CPM |
| Conference Date | 2014-06-20 - 2014-06-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2014-06-OME-EMD-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of Electrical Properties of n-ZnO/p-CuO Heterojunctions Prepared by Chemical Bath Deposition |
| Sub Title (in English) | Insertion of Intermediate Layer and Thermal Annealing |
| Keyword(1) | Chemical bath deposition |
| Keyword(2) | ZnO |
| Keyword(3) | CuO |
| Keyword(4) | pn heterojunction |
| Keyword(5) | |
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| 1st Author's Name | Tomoaki Terasako |
| 1st Author's Affiliation | Ehime University (Ehime Univ.) |
| 2nd Author's Name | Toshihiro Murakami |
| 2nd Author's Affiliation | Ehime University (Ehime Univ.) |
| 3rd Author's Name | Atsushi Hyouodou |
| 3rd Author's Affiliation | Ehime University (Ehime Univ.) |
| 4th Author's Name | Sho Shirakata |
| 4th Author's Affiliation | Ehime University (Ehime Univ.) |
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| Speaker | Author-1 |
| Date Time | 2014-06-20 15:00:00 |
| Presentation Time | 20 minutes |
| Registration for | CPM |
| Paper # | EMD2014-19, CPM2014-39, OME2014-27 |
| Volume (vol) | vol.114 |
| Number (no) | no.94(EMD), no.95(CPM), no.96(OME) |
| Page | pp.61-66 |
| #Pages | 6 |
| Date of Issue | 2014-06-13 (EMD, CPM, OME) |
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