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Paper Abstract and Keywords
Presentation 2014-06-19 16:55
[Invited Lecture] Low temperature poly-crystallization of group-IV semiconductor films on insulators -- use of low-melting-point Sn --
Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60 Link to ES Tech. Rep. Archives: SDM2014-60
Abstract (in Japanese) (See Japanese page) 
(in English) Low temperature growth of Ge1-xSnx on insulators can provide much wider range of options for device fabrication of 3D-LSIs and photo detectors. Simultaneous achievement of both low temperature growth and large grain growth of a GeSn polycrystal is a serious problem. Consequently, we have been developing low-temperature (<450oC) growth by using a eutectic metal of Sn as the assistant. In this techinical report, we introduce our recent topics about the low temperature crystallization of the GeSn thin-films on insulators; i.e., (1) liquid-Sn-driven lateral growth and (2) underwater pulsed laser annealing.
Keyword (in Japanese) (See Japanese page) 
(in English) group-IV semiconductor / poly-crystal / low temperature formation / underwater laser annealing / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 88, SDM2014-60, pp. 91-95, June 2014.
Paper # SDM2014-60 
Date of Issue 2014-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2014-60 Link to ES Tech. Rep. Archives: SDM2014-60

Conference Information
Committee SDM  
Conference Date 2014-06-19 - 2014-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2014-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low temperature poly-crystallization of group-IV semiconductor films on insulators 
Sub Title (in English) use of low-melting-point Sn 
Keyword(1) group-IV semiconductor  
Keyword(2) poly-crystal  
Keyword(3) low temperature formation  
Keyword(4) underwater laser annealing  
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1st Author's Name Masashi Kurosawa  
1st Author's Affiliation Nagoya University/JSPS (Nagoya Univ./JSPS)
2nd Author's Name Noriyuki Taoka  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Hiroshi Ikenoue  
3rd Author's Affiliation Kyushu University (Kyushu Univ.)
4th Author's Name Wakana Takeuchi  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Mitsuo Sakashita  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Osamu Nakatsuka  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
7th Author's Name Shigeaki Zaima  
7th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker
Date Time 2014-06-19 16:55:00 
Presentation Time 20 
Registration for SDM 
Paper # IEICE-SDM2014-60 
Volume (vol) IEICE-114 
Number (no) no.88 
Page pp.91-95 
#Pages IEICE-5 
Date of Issue IEICE-SDM-2014-06-12 


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