Paper Abstract and Keywords |
Presentation |
2014-06-19 16:55
[Invited Lecture]
Low temperature poly-crystallization of group-IV semiconductor films on insulators
-- use of low-melting-point Sn -- Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60 Link to ES Tech. Rep. Archives: SDM2014-60 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Low temperature growth of Ge1-xSnx on insulators can provide much wider range of options for device fabrication of 3D-LSIs and photo detectors. Simultaneous achievement of both low temperature growth and large grain growth of a GeSn polycrystal is a serious problem. Consequently, we have been developing low-temperature (<450oC) growth by using a eutectic metal of Sn as the assistant. In this techinical report, we introduce our recent topics about the low temperature crystallization of the GeSn thin-films on insulators; i.e., (1) liquid-Sn-driven lateral growth and (2) underwater pulsed laser annealing. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
group-IV semiconductor / poly-crystal / low temperature formation / underwater laser annealing / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 88, SDM2014-60, pp. 91-95, June 2014. |
Paper # |
SDM2014-60 |
Date of Issue |
2014-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2014-60 Link to ES Tech. Rep. Archives: SDM2014-60 |
Conference Information |
Committee |
SDM |
Conference Date |
2014-06-19 - 2014-06-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Material Science and Process Technology for MOS Devices and Memories |
Paper Information |
Registration To |
SDM |
Conference Code |
2014-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Low temperature poly-crystallization of group-IV semiconductor films on insulators |
Sub Title (in English) |
use of low-melting-point Sn |
Keyword(1) |
group-IV semiconductor |
Keyword(2) |
poly-crystal |
Keyword(3) |
low temperature formation |
Keyword(4) |
underwater laser annealing |
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1st Author's Name |
Masashi Kurosawa |
1st Author's Affiliation |
Nagoya University/JSPS (Nagoya Univ./JSPS) |
2nd Author's Name |
Noriyuki Taoka |
2nd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
3rd Author's Name |
Hiroshi Ikenoue |
3rd Author's Affiliation |
Kyushu University (Kyushu Univ.) |
4th Author's Name |
Wakana Takeuchi |
4th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
5th Author's Name |
Mitsuo Sakashita |
5th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
6th Author's Name |
Osamu Nakatsuka |
6th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
7th Author's Name |
Shigeaki Zaima |
7th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-06-19 16:55:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2014-60 |
Volume (vol) |
vol.114 |
Number (no) |
no.88 |
Page |
pp.91-95 |
#Pages |
5 |
Date of Issue |
2014-06-12 (SDM) |
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