| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2014-06-19 13:45 Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO2 Hiroki Shirakawa, Keita Yamaguchi (Univ. of Tsukuba), Katsumasa Kamiya (KAIT), Kenji Shiraishi (Nagoya Univ.)  SDM2014-52 Link to ES Tech. Rep. Archives: SDM2014-52 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Charge trapping memories such as the MONOS (Metal-Oxide-Nitride-Oxide-Semiconductor) type memories naturally have the characteristic for making the MLC (Multi Level Cell), 3D-structure, and high￢-density integration. About charge trapping layers in MONOS type memories, it has been reported that many O and N atoms are incorporated and electron occupied defects are confirmed near Si$O_2$/SiN interfaces. Yamaguchi et al. reported the atomistic mechanism during Program/Erase (P/E) cycle in SiN layer. However, atomistic behavior of defects in Si$O_2$ layer during P/E cycle is not elucidated. Thus, we investigate N and H incorporation effects in Si-rich Si$O_2$ by using first principle calculation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MONOS / charge trapping memory / SiO2 / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 88, SDM2014-52, pp. 49-53, June 2014. | |
| Paper # | SDM2014-52 | |
| Date of Issue | 2014-06-12 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2014-52 Link to ES Tech. Rep. Archives: SDM2014-52 |
|
| Conference Information | |
| Committee | SDM |
| Conference Date | 2014-06-19 - 2014-06-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO2 |
| Sub Title (in English) | |
| Keyword(1) | MONOS |
| Keyword(2) | charge trapping memory |
| Keyword(3) | SiO2 |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroki Shirakawa |
| 1st Author's Affiliation | University of Tsukuba (Univ. of Tsukuba) |
| 2nd Author's Name | Keita Yamaguchi |
| 2nd Author's Affiliation | University of Tsukuba (Univ. of Tsukuba) |
| 3rd Author's Name | Katsumasa Kamiya |
| 3rd Author's Affiliation | Kanagawa Institute of Technology (KAIT) |
| 4th Author's Name | Kenji Shiraishi |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | |
| 5th Author's Affiliation | () |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2014-06-19 13:45:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2014-52 |
| Volume (vol) | vol.114 |
| Number (no) | no.88 |
| Page | pp.49-53 |
| #Pages | 5 |
| Date of Issue | 2014-06-12 (SDM) |
[Return to Top Page]