Paper Abstract and Keywords |
Presentation |
2014-06-19 10:30
Stability of vacancy defect around metal/Ge interfaces; first-principles study Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46 Link to ES Tech. Rep. Archives: SDM2014-46 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic properties of metal/Ge interfaces when they are located near the interface. However, it is not clear how many vacancies exist and how they are distributed near the interface. In this work, we study the stability of vacancy defects near metal/Ge interfaces by the first-principles theoretical calculations. It is shown that the formation energy of vacancy is remarkably reduced around the interface due to the hybridization of electronic states of vacancy with metal-induced gap states (MIGS). As a result, the vacancy density increases by about six figures near the interface. We show that these features also apply to the cases of other point defects such as substitutional and interstitial defects. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Interface / Germanium / Vacancy defect / MIGS / Defect distribution / First-principles calculation / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 88, SDM2014-46, pp. 17-20, June 2014. |
Paper # |
SDM2014-46 |
Date of Issue |
2014-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2014-46 Link to ES Tech. Rep. Archives: SDM2014-46 |
Conference Information |
Committee |
SDM |
Conference Date |
2014-06-19 - 2014-06-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Material Science and Process Technology for MOS Devices and Memories |
Paper Information |
Registration To |
SDM |
Conference Code |
2014-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Stability of vacancy defect around metal/Ge interfaces; first-principles study |
Sub Title (in English) |
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Keyword(1) |
Interface |
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Germanium |
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Vacancy defect |
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MIGS |
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Defect distribution |
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First-principles calculation |
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1st Author's Name |
Shogo Sasaki |
1st Author's Affiliation |
Chiba University (Chiba Univ.) |
2nd Author's Name |
Takashi Nakayama |
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Chiba University (Chiba Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-06-19 10:30:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2014-46 |
Volume (vol) |
vol.114 |
Number (no) |
no.88 |
Page |
pp.17-20 |
#Pages |
4 |
Date of Issue |
2014-06-12 (SDM) |