Paper Abstract and Keywords |
Presentation |
2014-06-06 14:20
Prototype of GaN schottky diode for a rectenna Teruo Fujiwara, Yuichiro Ozawa, Naohiro Tanaka (IHI AEROSPACE), Masaaki Kuzuhara (Univ. of Fukui), Kazuhiro Fujimori (Okayama Univ.), Shuichi Yagi (POWDEC), Keisuke Naito (NDK), Shoichiro Mihara, Shuji Nakamura (J-spacesystems) WPT2014-26 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Schottky Barrier Diode based on GaN semiconductor is developing for high effciency 5.8GHz rectenna toward Space Solar Power System in future. This paper provides the test results on prototype GaN diode used for rectenna. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Space Solar Power System / 5.8GHz high efficiency rectenna / GaN schottky diode / prototype / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 72, WPT2014-26, pp. 11-16, June 2014. |
Paper # |
WPT2014-26 |
Date of Issue |
2014-05-30 (WPT) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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WPT2014-26 |
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