Paper Abstract and Keywords |
Presentation |
2014-06-06 13:55
Study of a 5.8GHz-band high efficiency rectifier with a high breakdown voltage GaAs schottky barrier diode Toshiyuki Tanaka, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Atsushi Yamamoto, Yukihiro Homma, Eiji Taniguchi (Mitsubishi Electric) WPT2014-25 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A rectifier used in receivers of microwave power transmission, such as space solar power systems, needs having high RF-DC conversion efficiency at high input power. In this paper, we studied effects on RF-DC conversion efficiency of breakdown voltage Bv and product of series resistance Rs and junction capacitance Cjo at 0 V (RC product), and we developed a newly GaAs SBD (Schottky Barrier Diode) with a high breakdown voltage. The single SBD, which was implemented on a ceramic LCC (Leadless Chip Carrier) and packaged, achieved RF-DC conversion efficiency of 77.2% at 5.8 GHz and input power of 27 dBm. The efficiency was goodly equal to our calculation. The difference of the measurement value and the calculation was only 1.7 point. Finally, we designed a 5.8 GHz-band single-shunt rectifier using the packaged SBD. The calculated RF-DC conversion efficiency was a world top class value of 81.7% at input power of 27 dBm. This RF-DC conversion efficiency was a world top value among packaged SBD, to our knowledge. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Space Solar Power Systems / Microwave Power Transmission / Rectenna / Rectifier / 5.8 GHz-band / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 72, WPT2014-25, pp. 5-10, June 2014. |
Paper # |
WPT2014-25 |
Date of Issue |
2014-05-30 (WPT) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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WPT2014-25 |
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