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Paper Abstract and Keywords
Presentation 2014-05-29 14:20
Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal
Wakana Takeuchi, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) ED2014-41 CPM2014-24 SDM2014-39 Link to ES Tech. Rep. Archives: ED2014-41 CPM2014-24 SDM2014-39
Abstract (in Japanese) (See Japanese page) 
(in English) Interaction between Sn and vacancy-related defects in an n-type Ge single crystal have been investigated by deep-level transient spectroscopy (DLTS). Di-vacancy and Sb-V defects are observed in the both Ge and Sn ion implanted samples. Meanwhile, in the Sn ion implanted samples, a trap of the single energy level of Ev+0.19 eV is observed while it does not appear in the Ge ion implanted samples. The density of this trap increases with the Sn concentration while those of di-vacancy and Sb-V defects decreases. Thus, Sn-V and Sn-related defects are preferentially formed with the Sn implantation into Ge single crystal. Based on these results, these trap density of di-vacancy and Sb-V defects can be decreased with increasing Sn atoms.
Keyword (in Japanese) (See Japanese page) 
(in English) Ion implantation / Ge / Sn / defects / DLTS / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 57, CPM2014-24, pp. 113-118, May 2014.
Paper # CPM2014-24 
Date of Issue 2014-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-41 CPM2014-24 SDM2014-39 Link to ES Tech. Rep. Archives: ED2014-41 CPM2014-24 SDM2014-39

Conference Information
Committee CPM ED SDM  
Conference Date 2014-05-28 - 2014-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2014-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal 
Sub Title (in English)  
Keyword(1) Ion implantation  
Keyword(2) Ge  
Keyword(3) Sn  
Keyword(4) defects  
Keyword(5) DLTS  
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1st Author's Name Wakana Takeuchi  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Noriyuki Taoka  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Mitsuo Sakashita  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Osamu Nakatsuka  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Shigeaki Zaima  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker
Date Time 2014-05-29 14:20:00 
Presentation Time 20 
Registration for CPM 
Paper # IEICE-ED2014-41,IEICE-CPM2014-24,IEICE-SDM2014-39 
Volume (vol) IEICE-114 
Number (no) no.56(ED), no.57(CPM), no.58(SDM) 
Page pp.113-118 
#Pages IEICE-6 
Date of Issue IEICE-ED-2014-05-21,IEICE-CPM-2014-05-21,IEICE-SDM-2014-05-21 


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