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Paper Abstract and Keywords
Presentation 2014-05-29 11:15
Surface treatment and homoepitaxial growth on AlN substrate
Yoshinobu Watanabe, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yosuke Iwasaki (JFE Mineral) ED2014-37 CPM2014-20 SDM2014-35 Link to ES Tech. Rep. Archives: ED2014-37 CPM2014-20 SDM2014-35
Abstract (in Japanese) (See Japanese page) 
(in English) Aluminum nitride (AlN) attracted as a substrate for not only light-emitting diodes and detectors operating in the deep-ultraviolet region but also high-power and high-frequency power devices. Owing to the well-established hydride vapor phase epitaxy (HVPE) techniques of thick AlN layer in recent years, the fabrication of low-density AlN films by homoepitaxial growth is expected. As a result of AlN growth on a freestanding AlN substrate fabricated by the sublimation method, we previously reported that cracks occurred despite the homoepitaxial growth. This may be due to the presence of grains and the surface damage caused by polishing. In this study, for the purpose of producing crack-free and high-quality AlN films, we conducted surface treatment and homoepitaxial growth on freestanding AlN substrates.
Keyword (in Japanese) (See Japanese page) 
(in English) AlN / freestanding substrate / surface treatment / homoepitaxial growth / hydride vapor phase epitaxy / trench substrate / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 57, CPM2014-20, pp. 97-100, May 2014.
Paper # CPM2014-20 
Date of Issue 2014-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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技術研究報告に掲載された論文の著作権はIEICEに帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-37 CPM2014-20 SDM2014-35 Link to ES Tech. Rep. Archives: ED2014-37 CPM2014-20 SDM2014-35

Conference Information
Committee CPM ED SDM  
Conference Date 2014-05-28 - 2014-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2014-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Surface treatment and homoepitaxial growth on AlN substrate 
Sub Title (in English)  
Keyword(1) AlN  
Keyword(2) freestanding substrate  
Keyword(3) surface treatment  
Keyword(4) homoepitaxial growth  
Keyword(5) hydride vapor phase epitaxy  
Keyword(6) trench substrate  
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1st Author's Name Yoshinobu Watanabe  
1st Author's Affiliation Mie University (Mie Univ.)
2nd Author's Name Hideto Miyake  
2nd Author's Affiliation Mie University (Mie Univ.)
3rd Author's Name Kazumasa Hiramatsu  
3rd Author's Affiliation Mie University (Mie Univ.)
4th Author's Name Yosuke Iwasaki  
4th Author's Affiliation JFE Mineral Company (JFE Mineral)
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Speaker
Date Time 2014-05-29 11:15:00 
Presentation Time 20 
Registration for CPM 
Paper # IEICE-ED2014-37,IEICE-CPM2014-20,IEICE-SDM2014-35 
Volume (vol) IEICE-114 
Number (no) no.56(ED), no.57(CPM), no.58(SDM) 
Page pp.97-100 
#Pages IEICE-4 
Date of Issue IEICE-ED-2014-05-21,IEICE-CPM-2014-05-21,IEICE-SDM-2014-05-21 


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