IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2014-05-29 10:55
Characterization and analysis of hysteresis properties in insulated-gate GaAs-based nanowire FETs
Ryota Kuroda, Xiang Yin, Masaki Sato, Seiya Kasai (Hokkaido Univ.) ED2014-36 CPM2014-19 SDM2014-34 Link to ES Tech. Rep. Archives: ED2014-36 CPM2014-19 SDM2014-34
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricate SiN- and Al2O3-gate GaAs etched nanowire FETs, characterized dynamic hysteresis properties in their transfer characteristics, and analyzed. Both devices show clear hysteresis characteristics, however the Al2O3-gate device exhibits large dispersion of the average current when white Gaussian noise is superimposed to gate bias. In this dispersion, the drain current decreases as the noise intensity increases, without changing threshold voltages, which is not seen in the SiN-gate device. We explain the observed behavior by current expected value under transition between the discrete current states.
Keyword (in Japanese) (See Japanese page) 
(in English) Nanowire FET / Hysteresis / Current dispersion / Insulated gate / GaAs / SiN / Al2O3 /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 56, ED2014-36, pp. 91-96, May 2014.
Paper # ED2014-36 
Date of Issue 2014-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-36 CPM2014-19 SDM2014-34 Link to ES Tech. Rep. Archives: ED2014-36 CPM2014-19 SDM2014-34

Conference Information
Committee CPM ED SDM  
Conference Date 2014-05-28 - 2014-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2014-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization and analysis of hysteresis properties in insulated-gate GaAs-based nanowire FETs 
Sub Title (in English)  
Keyword(1) Nanowire FET  
Keyword(2) Hysteresis  
Keyword(3) Current dispersion  
Keyword(4) Insulated gate  
Keyword(5) GaAs  
Keyword(6) SiN  
Keyword(7) Al2O3  
1st Author's Name Ryota Kuroda  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Xiang Yin  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Masaki Sato  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Seiya Kasai  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Date Time 2014-05-29 10:55:00 
Presentation Time 20 
Registration for ED 
Paper # IEICE-ED2014-36,IEICE-CPM2014-19,IEICE-SDM2014-34 
Volume (vol) IEICE-114 
Number (no) no.56(ED), no.57(CPM), no.58(SDM) 
Page pp.91-96 
#Pages IEICE-6 
Date of Issue IEICE-ED-2014-05-21,IEICE-CPM-2014-05-21,IEICE-SDM-2014-05-21 

[Return to Top Page]

[Return to IEICE Web Page]

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan