Paper Abstract and Keywords |
Presentation |
2014-05-28 11:10
Investigations on Sb incoporations and surface morphologies of GaNSb Daisuke Komori, Hiroki Sasajima, Tomoyuki Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (meijo Univ.), Isamu Akasaki (meijo Univ./nagoya Univ.) ED2014-19 CPM2014-2 SDM2014-17 Link to ES Tech. Rep. Archives: ED2014-19 CPM2014-2 SDM2014-17 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
It is difficult to form high quality nitride-based heterostructures with widely different compositions since large differences exist in growth temperature and lattice constant between them. We have attempted to resolve the above-mentioned issue by fabricating novel nitride-based semiconductors with Sb. At this moment, there are few reports about the epitaxial growth of GaNSb, in which no systematic experiments were carried out and GaSb molar fraction was limited to be less than several percent. In this study we systematically investigated various growth condition dependence on GaSb molar fraction and surface morphology. As a result, we found that the GaSb molar fraction is dependent on growth temperature and Sb/V supply ratio, while the surface morphology is dependent on growth rate and growth pressure. The maximum GaSb molar fraction that we obtained was 0.4%. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Nitride-based semiconductors / hetero strucyures / lattice mismatch / growth temperature / Sb / GaNSb / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 56, ED2014-19, pp. 7-10, May 2014. |
Paper # |
ED2014-19 |
Date of Issue |
2014-05-21 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2014-19 CPM2014-2 SDM2014-17 Link to ES Tech. Rep. Archives: ED2014-19 CPM2014-2 SDM2014-17 |
Conference Information |
Committee |
CPM ED SDM |
Conference Date |
2014-05-28 - 2014-05-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
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Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2014-05-CPM-ED-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Investigations on Sb incoporations and surface morphologies of GaNSb |
Sub Title (in English) |
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Keyword(1) |
Nitride-based semiconductors |
Keyword(2) |
hetero strucyures |
Keyword(3) |
lattice mismatch |
Keyword(4) |
growth temperature |
Keyword(5) |
Sb |
Keyword(6) |
GaNSb |
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1st Author's Name |
Daisuke Komori |
1st Author's Affiliation |
meijo University (meijo Univ.) |
2nd Author's Name |
Hiroki Sasajima |
2nd Author's Affiliation |
meijo University (meijo Univ.) |
3rd Author's Name |
Tomoyuki Suzuki |
3rd Author's Affiliation |
meijo University (meijo Univ.) |
4th Author's Name |
Tetsuya Takeuchi |
4th Author's Affiliation |
meijo University (meijo Univ.) |
5th Author's Name |
Satoshi Kamiyama |
5th Author's Affiliation |
meijo University (meijo Univ.) |
6th Author's Name |
Motoaki Iwaya |
6th Author's Affiliation |
meijo University (meijo Univ.) |
7th Author's Name |
Isamu Akasaki |
7th Author's Affiliation |
meijo University/nagoya University (meijo Univ./nagoya Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-05-28 11:10:00 |
Presentation Time |
20 minutes |
Registration for |
ED |
Paper # |
ED2014-19, CPM2014-2, SDM2014-17 |
Volume (vol) |
vol.114 |
Number (no) |
no.56(ED), no.57(CPM), no.58(SDM) |
Page |
pp.7-10 |
#Pages |
4 |
Date of Issue |
2014-05-21 (ED, CPM, SDM) |
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