IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2014-05-28 11:10
Investigations on Sb incoporations and surface morphologies of GaNSb
Daisuke Komori, Hiroki Sasajima, Tomoyuki Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (meijo Univ.), Isamu Akasaki (meijo Univ./nagoya Univ.) ED2014-19 CPM2014-2 SDM2014-17 Link to ES Tech. Rep. Archives: ED2014-19 CPM2014-2 SDM2014-17
Abstract (in Japanese) (See Japanese page) 
(in English) It is difficult to form high quality nitride-based heterostructures with widely different compositions since large differences exist in growth temperature and lattice constant between them. We have attempted to resolve the above-mentioned issue by fabricating novel nitride-based semiconductors with Sb. At this moment, there are few reports about the epitaxial growth of GaNSb, in which no systematic experiments were carried out and GaSb molar fraction was limited to be less than several percent. In this study we systematically investigated various growth condition dependence on GaSb molar fraction and surface morphology. As a result, we found that the GaSb molar fraction is dependent on growth temperature and Sb/V supply ratio, while the surface morphology is dependent on growth rate and growth pressure. The maximum GaSb molar fraction that we obtained was 0.4%.
Keyword (in Japanese) (See Japanese page) 
(in English) Nitride-based semiconductors / hetero strucyures / lattice mismatch / growth temperature / Sb / GaNSb / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 56, ED2014-19, pp. 7-10, May 2014.
Paper # ED2014-19 
Date of Issue 2014-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-19 CPM2014-2 SDM2014-17 Link to ES Tech. Rep. Archives: ED2014-19 CPM2014-2 SDM2014-17

Conference Information
Committee CPM ED SDM  
Conference Date 2014-05-28 - 2014-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2014-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Investigations on Sb incoporations and surface morphologies of GaNSb 
Sub Title (in English)
Keyword(1) Nitride-based semiconductors  
Keyword(2) hetero strucyures  
Keyword(3) lattice mismatch  
Keyword(4) growth temperature  
Keyword(5) Sb  
Keyword(6) GaNSb  
Keyword(7)  
Keyword(8)  
1st Author's Name Daisuke Komori  
1st Author's Affiliation meijo University (meijo Univ.)
2nd Author's Name Hiroki Sasajima  
2nd Author's Affiliation meijo University (meijo Univ.)
3rd Author's Name Tomoyuki Suzuki  
3rd Author's Affiliation meijo University (meijo Univ.)
4th Author's Name Tetsuya Takeuchi  
4th Author's Affiliation meijo University (meijo Univ.)
5th Author's Name Satoshi Kamiyama  
5th Author's Affiliation meijo University (meijo Univ.)
6th Author's Name Motoaki Iwaya  
6th Author's Affiliation meijo University (meijo Univ.)
7th Author's Name Isamu Akasaki  
7th Author's Affiliation meijo University/nagoya University (meijo Univ./nagoya Univ.)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2014-05-28 11:10:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2014-19, CPM2014-2, SDM2014-17 
Volume (vol) vol.114 
Number (no) no.56(ED), no.57(CPM), no.58(SDM) 
Page pp.7-10 
#Pages
Date of Issue 2014-05-21 (ED, CPM, SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan