Paper Abstract and Keywords |
Presentation |
2014-03-05 13:50
Design methodology on Dynamic Multi-Vth control technique for Silicon on Thin Buried Oxide(SOTB) Tatsuki Saigusa, Kimiyoshi Usami (Shibaura Inst. of Tech) VLD2013-162 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Silicon on thin BOX(SOTB) is one of FD-SOI device.It is possible to operate with ultra-low voltage of 0.4V and greatly change the threshold voltage of a transistor by body biasing.So far, a design technique that realizes multi-vth using body biasing has been proposed.After designing the circuit which consists of only high threshold transistors, the threshold voltage is lowered only at the area which needs high-speed operation by applying body bias.In this research, we proposed a versatile design methodology and performed the evaluation for it.We show a comparison of a multi-Vth design and the design methodology that we proposed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Silicon-on-Thin-BOX / Body Bias / Multi Vth / Leakage Power / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 454, VLD2013-162, pp. 153-158, March 2014. |
Paper # |
VLD2013-162 |
Date of Issue |
2014-02-24 (VLD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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VLD2013-162 |
Conference Information |
Committee |
VLD |
Conference Date |
2014-03-03 - 2014-03-05 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Okinawa Seinen Kaikan |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Design Technology for System-on-Silicon |
Paper Information |
Registration To |
VLD |
Conference Code |
2014-03-VLD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Design methodology on Dynamic Multi-Vth control technique for Silicon on Thin Buried Oxide(SOTB) |
Sub Title (in English) |
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Silicon-on-Thin-BOX |
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Body Bias |
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Multi Vth |
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Leakage Power |
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1st Author's Name |
Tatsuki Saigusa |
1st Author's Affiliation |
Shibaura Institute of Technology (Shibaura Inst. of Tech) |
2nd Author's Name |
Kimiyoshi Usami |
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Shibaura Institute of Technology (Shibaura Inst. of Tech) |
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Speaker |
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Date Time |
2014-03-05 13:50:00 |
Presentation Time |
25 minutes |
Registration for |
VLD |
Paper # |
VLD2013-162 |
Volume (vol) |
vol.113 |
Number (no) |
no.454 |
Page |
pp.153-158 |
#Pages |
6 |
Date of Issue |
2014-02-24 (VLD) |