Paper Abstract and Keywords |
Presentation |
2014-02-28 11:40
Direct observation of conductive filaments during MoOx/Cu ReRAM switching Yuuki Ohno, Takahiro Hiroi, Masaki Kudo, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2013-148 SDM2013-163 Link to ES Tech. Rep. Archives: ED2013-148 SDM2013-163 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
While a conductive filament formed by movement of the metal ions in the solid electrolyte is considered as the mechanism of resistive random access memory (ReRAM), the details of conductive filaments are still unknown. In order to investigate the switching mechanism of the ReRAM, we examined the details of switching operation of ReRAM made of Cu/MoOx using in-situ TEM. The I-V characteristics obtained from actual devices were reproduced also at the measurements in TEM. During the Set and the Reset processes, formation and rupture of Cu filaments were clearly observed. When the repeated switching behavior was investigated in TEM, it was found that the filament position can change at individual switching operation.
Keyword Resistive Random Access Memory (ReRAM), Solid Electrolyte, in-situ TEM |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Resistive Random Access Memory (ReRAM) / Solid Electrolyte / in-situ TEM / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 450, SDM2013-163, pp. 89-94, Feb. 2014. |
Paper # |
SDM2013-163 |
Date of Issue |
2014-02-20 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2013-148 SDM2013-163 Link to ES Tech. Rep. Archives: ED2013-148 SDM2013-163 |
Conference Information |
Committee |
ED SDM |
Conference Date |
2014-02-27 - 2014-02-28 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hokkaido Univ. Centennial Hall |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Functional nanodevices and related technologies |
Paper Information |
Registration To |
SDM |
Conference Code |
2014-02-ED-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Direct observation of conductive filaments during MoOx/Cu ReRAM switching |
Sub Title (in English) |
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Keyword(1) |
Resistive Random Access Memory (ReRAM) |
Keyword(2) |
Solid Electrolyte |
Keyword(3) |
in-situ TEM |
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1st Author's Name |
Yuuki Ohno |
1st Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
2nd Author's Name |
Takahiro Hiroi |
2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
3rd Author's Name |
Masaki Kudo |
3rd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
4th Author's Name |
Kouichi Hamada |
4th Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
5th Author's Name |
Masashi Arita |
5th Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
6th Author's Name |
Yasuo Takahashi |
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Hokkaido University (Hokkaido Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-02-28 11:40:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
ED2013-148, SDM2013-163 |
Volume (vol) |
vol.113 |
Number (no) |
no.449(ED), no.450(SDM) |
Page |
pp.89-94 |
#Pages |
6 |
Date of Issue |
2014-02-20 (ED, SDM) |
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