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Paper Abstract and Keywords
Presentation 2014-02-28 11:40
Direct observation of conductive filaments during MoOx/Cu ReRAM switching
Yuuki Ohno, Takahiro Hiroi, Masaki Kudo, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2013-148 SDM2013-163 Link to ES Tech. Rep. Archives: ED2013-148 SDM2013-163
Abstract (in Japanese) (See Japanese page) 
(in English) While a conductive filament formed by movement of the metal ions in the solid electrolyte is considered as the mechanism of resistive random access memory (ReRAM), the details of conductive filaments are still unknown. In order to investigate the switching mechanism of the ReRAM, we examined the details of switching operation of ReRAM made of Cu/MoOx using in-situ TEM. The I-V characteristics obtained from actual devices were reproduced also at the measurements in TEM. During the Set and the Reset processes, formation and rupture of Cu filaments were clearly observed. When the repeated switching behavior was investigated in TEM, it was found that the filament position can change at individual switching operation.
Keyword Resistive Random Access Memory (ReRAM), Solid Electrolyte, in-situ TEM
Keyword (in Japanese) (See Japanese page) 
(in English) Resistive Random Access Memory (ReRAM) / Solid Electrolyte / in-situ TEM / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 450, SDM2013-163, pp. 89-94, Feb. 2014.
Paper # SDM2013-163 
Date of Issue 2014-02-20 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-148 SDM2013-163 Link to ES Tech. Rep. Archives: ED2013-148 SDM2013-163

Conference Information
Committee ED SDM  
Conference Date 2014-02-27 - 2014-02-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. Centennial Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To SDM 
Conference Code 2014-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Direct observation of conductive filaments during MoOx/Cu ReRAM switching 
Sub Title (in English)  
Keyword(1) Resistive Random Access Memory (ReRAM)  
Keyword(2) Solid Electrolyte  
Keyword(3) in-situ TEM  
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1st Author's Name Yuuki Ohno  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Takahiro Hiroi  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Masaki Kudo  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Kouichi Hamada  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
5th Author's Name Masashi Arita  
5th Author's Affiliation Hokkaido University (Hokkaido Univ.)
6th Author's Name Yasuo Takahashi  
6th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2014-02-28 11:40:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2013-148, SDM2013-163 
Volume (vol) vol.113 
Number (no) no.449(ED), no.450(SDM) 
Page pp.89-94 
#Pages
Date of Issue 2014-02-20 (ED, SDM) 


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