Paper Abstract and Keywords |
Presentation |
2014-02-28 10:50
Tuning of Resistance of Au Nanowires by Feedback-Controlled Electromigration Using Real-Time Operating System (RTOS) Masazumi Ando, Yuma Kanamaru, Takanari Saito, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-146 SDM2013-161 Link to ES Tech. Rep. Archives: ED2013-146 SDM2013-161 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Electromigration method becomes promising for the fabrication of nanogap electrodes. However, the nanogap electrodes fabricated by this method tend to exhibit high tunnel resistance. A feedback-controlled electromigration (FCE) scheme has been successfully and widely employed to make nanogaps with controlled electrical properties. We have already reported that the control of the channel resistance of metal nanowires is performed by stepwise-feedback controlled electromigration (SFCE) using general-purpose operating system (GPOS). SFCE procedure finely and stepwisely divides a conventional FCE scheme into several FCE cycles. Here, we propose SFCE method using real-time operating system (RTOS) in order to precisely and stably tune the channel resistance of metal nanowire at room temperature. GPOS is usually designed to maintain user responsiveness with many programs and services running, while RTOS is designed to run critical applications reliably and with precise timing. In this report, it is revealed that control characteristics of the channel resistance of metal nanowire are successfully improved using RTOS-controlled SFCE method, as compared with SFCE using GPOS. These results indicate that RTOS is useful for the stable control of the channel resistance of metal nanowire using SFCE scheme. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
real-time operating system / electromigration / nanogap / feedback-controlled electromigration / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 449, ED2013-146, pp. 77-82, Feb. 2014. |
Paper # |
ED2013-146 |
Date of Issue |
2014-02-20 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2013-146 SDM2013-161 Link to ES Tech. Rep. Archives: ED2013-146 SDM2013-161 |
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