Paper Abstract and Keywords |
Presentation |
2014-02-28 12:05
Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration Ryutaro Suda, Mitsuki Ito, Kohei Morihara, Takahiro Toyonaka, Kazuki Takikawa, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-149 SDM2013-164 Link to ES Tech. Rep. Archives: ED2013-149 SDM2013-164 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based resistive switches, and quantum point contacts (QPCs) composed of nanogaps at room temperature. This scheme is based on electromigration induced by a field emission current, which is so-called “activation”. Using the activation method, the electrical properties of the nanogaps can be controlled by only adjusting the magnitude of the applied current during the activation process. The initial Ni nanogaps with the separation of a few tens of nanometers were fabricated by conventional electron-beam lithography and lift-off process. The magnetoresistance of FMSET devices formed by the activation with the preset current Is of 200 nA is greatly enhanced at the Coulomb blockade regime. As the preset currents Is become larger than 10 µA, we observed a resistive switching behavior for the voltage sweep. The device could be reversibly switched with resistance ratios of 102, measured at a read voltage of 1 V. Furthermore, the conductance changed in quantized steps of 0.5G0 (G0 = 2e2/h) at the final stage of activation. It is suggested that few-atom Ni contacts are achieved using Ni nanogaps controlled by the activation with precisely tuned applied current. The results clearly indicate that the activation procedure allows us to easily and simply fabricate planar-type nano-scale devices based on Ni nanogaps. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
electromigration / nanogap / ferromagnetic single-electron transistor / resistive switch / quantum point contact / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 449, ED2013-149, pp. 95-100, Feb. 2014. |
Paper # |
ED2013-149 |
Date of Issue |
2014-02-20 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2013-149 SDM2013-164 Link to ES Tech. Rep. Archives: ED2013-149 SDM2013-164 |
|