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Paper Abstract and Keywords
Presentation 2014-02-28 12:05
Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration
Ryutaro Suda, Mitsuki Ito, Kohei Morihara, Takahiro Toyonaka, Kazuki Takikawa, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-149 SDM2013-164 Link to ES Tech. Rep. Archives: ED2013-149 SDM2013-164
Abstract (in Japanese) (See Japanese page) 
(in English) We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based resistive switches, and quantum point contacts (QPCs) composed of nanogaps at room temperature. This scheme is based on electromigration induced by a field emission current, which is so-called “activation”. Using the activation method, the electrical properties of the nanogaps can be controlled by only adjusting the magnitude of the applied current during the activation process. The initial Ni nanogaps with the separation of a few tens of nanometers were fabricated by conventional electron-beam lithography and lift-off process. The magnetoresistance of FMSET devices formed by the activation with the preset current Is of 200 nA is greatly enhanced at the Coulomb blockade regime. As the preset currents Is become larger than 10 µA, we observed a resistive switching behavior for the voltage sweep. The device could be reversibly switched with resistance ratios of 102, measured at a read voltage of 1 V. Furthermore, the conductance changed in quantized steps of 0.5G0 (G0 = 2e2/h) at the final stage of activation. It is suggested that few-atom Ni contacts are achieved using Ni nanogaps controlled by the activation with precisely tuned applied current. The results clearly indicate that the activation procedure allows us to easily and simply fabricate planar-type nano-scale devices based on Ni nanogaps.
Keyword (in Japanese) (See Japanese page) 
(in English) electromigration / nanogap / ferromagnetic single-electron transistor / resistive switch / quantum point contact / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 449, ED2013-149, pp. 95-100, Feb. 2014.
Paper # ED2013-149 
Date of Issue 2014-02-20 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-149 SDM2013-164 Link to ES Tech. Rep. Archives: ED2013-149 SDM2013-164

Conference Information
Committee ED SDM  
Conference Date 2014-02-27 - 2014-02-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. Centennial Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To ED 
Conference Code 2014-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration 
Sub Title (in English)  
Keyword(1) electromigration  
Keyword(2) nanogap  
Keyword(3) ferromagnetic single-electron transistor  
Keyword(4) resistive switch  
Keyword(5) quantum point contact  
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1st Author's Name Ryutaro Suda  
1st Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.)
2nd Author's Name Mitsuki Ito  
2nd Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.)
3rd Author's Name Kohei Morihara  
3rd Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.)
4th Author's Name Takahiro Toyonaka  
4th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.)
5th Author's Name Kazuki Takikawa  
5th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.)
6th Author's Name Jun-ichi Shirakashi  
6th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.)
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Speaker Author-1 
Date Time 2014-02-28 12:05:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-149, SDM2013-164 
Volume (vol) vol.113 
Number (no) no.449(ED), no.450(SDM) 
Page pp.95-100 
#Pages
Date of Issue 2014-02-20 (ED, SDM) 


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