Paper Abstract and Keywords |
Presentation |
2014-02-27 15:10
On switching characteristics and equivalent circuit of SiC-BGSIT device Yukitaka I, Akihumi Ogawa, Tetsuro Tanaka (Kagoshima Univ.) EE2013-56 CPM2013-157 Link to ES Tech. Rep. Archives: CPM2013-157 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The objective of this report is to experimentally investigate the occurrence conditions of false operation caused by the drain-to-gate interaction of a SiC buried-gate static-induction-transistor (SiC-BGSIT) and to make a SPICE element model of the device. In the experiments on the drain-to-gate interaction, the parallel-structured circuit by which the experiments are easily performed and the devices are protected is employed. To conduct the quantitative analysis of the drain-to-gate interaction through circuit simulations, a SPICE element model of the SiC-BGSIT was build on trial. The SPICE3 JFET model is used for the SiC-BGSIT; in some cases simulation results do not correspond with experimental results. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC / BGSIT / drain - gate interactions / SPICE / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 444, EE2013-56, pp. 43-48, Feb. 2014. |
Paper # |
EE2013-56 |
Date of Issue |
2014-02-20 (EE, CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
EE2013-56 CPM2013-157 Link to ES Tech. Rep. Archives: CPM2013-157 |
Conference Information |
Committee |
EE CPM |
Conference Date |
2014-02-27 - 2014-02-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
EE |
Conference Code |
2014-02-EE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
On switching characteristics and equivalent circuit of SiC-BGSIT device |
Sub Title (in English) |
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SiC |
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BGSIT |
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drain - gate interactions |
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SPICE |
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1st Author's Name |
Yukitaka I |
1st Author's Affiliation |
Kagoshima University (Kagoshima Univ.) |
2nd Author's Name |
Akihumi Ogawa |
2nd Author's Affiliation |
Kagoshima University (Kagoshima Univ.) |
3rd Author's Name |
Tetsuro Tanaka |
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Kagoshima University (Kagoshima Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-02-27 15:10:00 |
Presentation Time |
30 minutes |
Registration for |
EE |
Paper # |
EE2013-56, CPM2013-157 |
Volume (vol) |
vol.113 |
Number (no) |
no.444(EE), no.445(CPM) |
Page |
pp.43-48 |
#Pages |
6 |
Date of Issue |
2014-02-20 (EE, CPM) |
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