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Paper Abstract and Keywords
Presentation 2014-02-27 15:10
On switching characteristics and equivalent circuit of SiC-BGSIT device
Yukitaka I, Akihumi Ogawa, Tetsuro Tanaka (Kagoshima Univ.) EE2013-56 CPM2013-157 Link to ES Tech. Rep. Archives: CPM2013-157
Abstract (in Japanese) (See Japanese page) 
(in English) The objective of this report is to experimentally investigate the occurrence conditions of false operation caused by the drain-to-gate interaction of a SiC buried-gate static-induction-transistor (SiC-BGSIT) and to make a SPICE element model of the device. In the experiments on the drain-to-gate interaction, the parallel-structured circuit by which the experiments are easily performed and the devices are protected is employed. To conduct the quantitative analysis of the drain-to-gate interaction through circuit simulations, a SPICE element model of the SiC-BGSIT was build on trial. The SPICE3 JFET model is used for the SiC-BGSIT; in some cases simulation results do not correspond with experimental results.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / BGSIT / drain - gate interactions / SPICE / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 444, EE2013-56, pp. 43-48, Feb. 2014.
Paper # EE2013-56 
Date of Issue 2014-02-20 (EE, CPM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EE2013-56 CPM2013-157 Link to ES Tech. Rep. Archives: CPM2013-157

Conference Information
Committee EE CPM  
Conference Date 2014-02-27 - 2014-02-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EE 
Conference Code 2014-02-EE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) On switching characteristics and equivalent circuit of SiC-BGSIT device 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) BGSIT  
Keyword(3) drain - gate interactions  
Keyword(4) SPICE  
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1st Author's Name Yukitaka I  
1st Author's Affiliation Kagoshima University (Kagoshima Univ.)
2nd Author's Name Akihumi Ogawa  
2nd Author's Affiliation Kagoshima University (Kagoshima Univ.)
3rd Author's Name Tetsuro Tanaka  
3rd Author's Affiliation Kagoshima University (Kagoshima Univ.)
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Speaker
Date Time 2014-02-27 15:10:00 
Presentation Time 30 
Registration for EE 
Paper # IEICE-EE2013-56,IEICE-CPM2013-157 
Volume (vol) IEICE-113 
Number (no) no.444(EE), no.445(CPM) 
Page pp.43-48 
#Pages IEICE-6 
Date of Issue IEICE-EE-2014-02-20,IEICE-CPM-2014-02-20 


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