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| Presentation | 2014-02-27 15:45 Realizing topological insulating phase in the heterostructure composed of direct transition band gap semiconductors Kyoichi Suzuki, Koji Onomitsu, Yuichi Harada, Koji Muraki (NTT)  ED2013-136 SDM2013-151 Link to ES Tech. Rep. Archives: ED2013-136 SDM2013-151 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have realized a topological insulating phase in a heterostructure composed of direct transition band gap semiconductors. Edge channel transport without bulk contribution has been confirmed on the basis of the fact that the non-local resistance ratios between adjacent voltage contact pairs does not depend on the current path. This method allows us to demonstrate the realization of a topological insulating phase and the existence of edge channels even when the conductance quantization of the edge channels is incomplete. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Topological insulator / Edge channel / Non-local resistance / Atomic layer deposition / Quantum spin Hall effect / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 449, ED2013-136, pp. 25-30, Feb. 2014. | |
| Paper # | ED2013-136 | |
| Date of Issue | 2014-02-20 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2013-136 SDM2013-151 Link to ES Tech. Rep. Archives: ED2013-136 SDM2013-151 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2014-02-27 - 2014-02-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ. Centennial Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional nanodevices and related technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2014-02-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Realizing topological insulating phase in the heterostructure composed of direct transition band gap semiconductors |
| Sub Title (in English) | |
| Keyword(1) | Topological insulator |
| Keyword(2) | Edge channel |
| Keyword(3) | Non-local resistance |
| Keyword(4) | Atomic layer deposition |
| Keyword(5) | Quantum spin Hall effect |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kyoichi Suzuki |
| 1st Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 2nd Author's Name | Koji Onomitsu |
| 2nd Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 3rd Author's Name | Yuichi Harada |
| 3rd Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 4th Author's Name | Koji Muraki |
| 4th Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
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| Speaker | Author-1 |
| Date Time | 2014-02-27 15:45:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2013-136, SDM2013-151 |
| Volume (vol) | vol.113 |
| Number (no) | no.449(ED), no.450(SDM) |
| Page | pp.25-30 |
| #Pages | 6 |
| Date of Issue | 2014-02-20 (ED, SDM) |
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