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Paper Abstract and Keywords
Presentation 2014-01-29 14:40
[Invited Talk] Suppression of Die-to-Die Delay Variability of Silicon on Thin Buried Oxide (SOTB) CMOS Circuits by Balanced P/N Drivability Control with Back-Bias for Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Koichiro Ishibashi (Univ. of Electro- Comm.), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo), Yasuo Yamaguchi (LEAP) SDM2013-143 Link to ES Tech. Rep. Archives: SDM2013-143
Abstract (in Japanese) (See Japanese page) 
(in English) Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation voltage (Vdd). In the ultralow-Vdd regime, however, the upsurging delay (τpd) variability is the most important challenge. This paper proposes the balanced n/p drivability control method for reducing the die-to-die delay variation by back bias applicable for various circuits. Excellent variability reduction by this balanced control is demonstrated at Vdd = 0.4 V.
Keyword (in Japanese) (See Japanese page) 
(in English) SOTB / SOI / back bias / ring oscillator / τpd / variability / ultra-low voltage /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 420, SDM2013-143, pp. 35-38, Jan. 2014.
Paper # SDM2013-143 
Date of Issue 2014-01-22 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF SDM2013-143 Link to ES Tech. Rep. Archives: SDM2013-143

Conference Information
Committee SDM  
Conference Date 2014-01-29 - 2014-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2014-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Suppression of Die-to-Die Delay Variability of Silicon on Thin Buried Oxide (SOTB) CMOS Circuits by Balanced P/N Drivability Control with Back-Bias for Ultralow-Voltage (0.4 V) Operation 
Sub Title (in English)  
Keyword(1) SOTB  
Keyword(2) SOI  
Keyword(3) back bias  
Keyword(4) ring oscillator  
Keyword(5) τpd  
Keyword(6) variability  
Keyword(7) ultra-low voltage  
Keyword(8)  
1st Author's Name Hideki Makiyama  
1st Author's Affiliation Low-power Electronics Association & Project (LEAP)
2nd Author's Name Yoshiki Yamamoto  
2nd Author's Affiliation Low-power Electronics Association & Project (LEAP)
3rd Author's Name Hirofumi Shinohara  
3rd Author's Affiliation Low-power Electronics Association & Project (LEAP)
4th Author's Name Toshiaki Iwamatsu  
4th Author's Affiliation Low-power Electronics Association & Project (LEAP)
5th Author's Name Hidekazu Oda  
5th Author's Affiliation Low-power Electronics Association & Project (LEAP)
6th Author's Name Nobuyuki Sugii  
6th Author's Affiliation Low-power Electronics Association & Project (LEAP)
7th Author's Name Koichiro Ishibashi  
7th Author's Affiliation The University of Electro- Communications (Univ. of Electro- Comm.)
8th Author's Name Tomoko Mizutani  
8th Author's Affiliation The Univ. of Tokyo (Univ. of Tokyo)
9th Author's Name Toshiro Hiramoto  
9th Author's Affiliation The Univ. of Tokyo (Univ. of Tokyo)
10th Author's Name Yasuo Yamaguchi  
10th Author's Affiliation Low-power Electronics Association & Project (LEAP)
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Speaker Author-1 
Date Time 2014-01-29 14:40:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2013-143 
Volume (vol) vol.113 
Number (no) no.420 
Page pp.35-38 
#Pages
Date of Issue 2014-01-22 (SDM) 


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