IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2014-01-29 10:50
[Invited Talk] Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs
Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2013-138 Link to ES Tech. Rep. Archives: SDM2013-138
Abstract (in Japanese) (See Japanese page) 
(in English) The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and reliability has been thoroughly investigated. It was demonstrated that heated I/I brings perfect crystallization after annealing even in ultrathin Si channel. For the first time, it was found that heated I/I dramatically improves the characteristics such as Ion-Ioff, Vth variability, and bias temperature instability (BTI) for both nMOS and pMOS FinFETs in comparison with conventional room temperature I/I.
Keyword (in Japanese) (See Japanese page) 
(in English) FinFETs / Source/drain Extension / Heated Ion Implantation / Crystallization / Ion / Ioff / BTI Characteristics /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 420, SDM2013-138, pp. 13-16, Jan. 2014.
Paper # SDM2013-138 
Date of Issue 2014-01-22 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2013-138 Link to ES Tech. Rep. Archives: SDM2013-138

Conference Information
Committee SDM  
Conference Date 2014-01-29 - 2014-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2014-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs 
Sub Title (in English)  
Keyword(1) FinFETs  
Keyword(2) Source/drain Extension  
Keyword(3) Heated Ion Implantation  
Keyword(4) Crystallization  
Keyword(5) Ion  
Keyword(6) Ioff  
Keyword(7) BTI Characteristics  
Keyword(8)  
1st Author's Name Wataru Mizubayashi  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Hiroshi Onoda  
2nd Author's Affiliation Nissin Ion Equipment Co., Ltd., (Nissin Ion Equipment)
3rd Author's Name Yoshiki Nakashima  
3rd Author's Affiliation Nissin Ion Equipment Co., Ltd., (Nissin Ion Equipment)
4th Author's Name Yuki Ishikawa  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Takashi Matsukawa  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Kazuhiko Endo  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Yongxun Liu  
7th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
8th Author's Name Shinichi Ouchi  
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
9th Author's Name Junichi Tsukada  
9th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
10th Author's Name Hiromi Yamauchi  
10th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
11th Author's Name Shinji Migita  
11th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
12th Author's Name Yukinori Morita  
12th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
13th Author's Name Hiroyuki Ota  
13th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
14th Author's Name Meishoku Masahara  
14th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker
Date Time 2014-01-29 10:50:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2013-138 
Volume (vol) IEICE-113 
Number (no) no.420 
Page pp.13-16 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2014-01-22 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan