| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2014-01-29 10:50 [Invited Talk] Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST)  SDM2013-138 Link to ES Tech. Rep. Archives: SDM2013-138 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and reliability has been thoroughly investigated. It was demonstrated that heated I/I brings perfect crystallization after annealing even in ultrathin Si channel. For the first time, it was found that heated I/I dramatically improves the characteristics such as Ion-Ioff, Vth variability, and bias temperature instability (BTI) for both nMOS and pMOS FinFETs in comparison with conventional room temperature I/I. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | FinFETs / Source/drain Extension / Heated Ion Implantation / Crystallization / Ion / Ioff / BTI Characteristics / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 420, SDM2013-138, pp. 13-16, Jan. 2014. | |
| Paper # | SDM2013-138 | |
| Date of Issue | 2014-01-22 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2013-138 Link to ES Tech. Rep. Archives: SDM2013-138 |
|
| Conference Information | |
| Committee | SDM |
| Conference Date | 2014-01-29 - 2014-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs |
| Sub Title (in English) | |
| Keyword(1) | FinFETs |
| Keyword(2) | Source/drain Extension |
| Keyword(3) | Heated Ion Implantation |
| Keyword(4) | Crystallization |
| Keyword(5) | Ion |
| Keyword(6) | Ioff |
| Keyword(7) | BTI Characteristics |
| Keyword(8) | |
| 1st Author's Name | Wataru Mizubayashi |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name | Hiroshi Onoda |
| 2nd Author's Affiliation | Nissin Ion Equipment Co., Ltd., (Nissin Ion Equipment) |
| 3rd Author's Name | Yoshiki Nakashima |
| 3rd Author's Affiliation | Nissin Ion Equipment Co., Ltd., (Nissin Ion Equipment) |
| 4th Author's Name | Yuki Ishikawa |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 5th Author's Name | Takashi Matsukawa |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 6th Author's Name | Kazuhiko Endo |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 7th Author's Name | Yongxun Liu |
| 7th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 8th Author's Name | Shinichi Ouchi |
| 8th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 9th Author's Name | Junichi Tsukada |
| 9th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 10th Author's Name | Hiromi Yamauchi |
| 10th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 11th Author's Name | Shinji Migita |
| 11th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 12th Author's Name | Yukinori Morita |
| 12th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 13th Author's Name | Hiroyuki Ota |
| 13th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 14th Author's Name | Meishoku Masahara |
| 14th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | 1 |
| Date Time | 2014-01-29 10:50:00 |
| Presentation Time | 25 |
| Registration for | SDM |
| Paper # | IEICE-SDM2013-138 |
| Volume (vol) | IEICE-113 |
| Number (no) | no.420 |
| Page | pp.13-16 |
| #Pages | IEICE-4 |
| Date of Issue | IEICE-SDM-2014-01-22 |
[Return to Top Page]